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The BLP0408H9S30Z is a 30 W LDMOS driver transistor designed for broadcast, class-AB transmitter, and industrial applications. It operates in the frequency range from 400 MHz to 860 MHz with excellent ruggedness suitable for digital and analog transmitters. The device features high power gain of 20.2 dB and drain efficiency of 62% at 714 MHz under pulsed CW conditions (VDS = 50 V, IDq = 60 mA). It has a drain-source breakdown voltage of 108 V and a maximum junction temperature of 225 °C. Packaged in TO-270-2F-1, it includes integrated dual-sided ESD protection.
Verify the specific ordering suffix against the manufacturer's current documentation to confirm packing details. The Z suffix corresponds to reel packaging with a minimum orderable quantity of 500 pieces. Confirm RoHS compliance status directly on the official Ampleon website as referenced in the product details section.
Select this component for applications requiring a 30 W output power level within the 400 MHz to 860 MHz range. Ensure the design accommodates a thermal resistance of 1.7 K/W from junction to case. Verify that the operating conditions remain within the absolute maximum ratings, particularly the 108 V drain-source voltage limit.
This part belongs to the Ampleon Power LDMOS transistor series, specifically optimized for driver stages in broadcast transmitters. It serves as a robust solution for UHF band applications where high reliability and wide bandwidth are critical requirements for both digital and analog signal transmission.
Consult the official Ampleon datasheet or sales office for confirmed substitute part numbers. Do not assume compatibility with other LDMOS devices without verifying pinout, electrical characteristics, and package dimensions.