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The BLP0427M9S20GXY is an N-channel RF LDMOS transistor manufactured by Ampleon USA Inc. It operates within a frequency range of 920 MHz to 960 MHz and delivers a typical power gain of 19 dB. The device features a drain-source breakdown voltage (Vds) of 65 V and a continuous drain current (Id) of 2.5 A. With a maximum output power capability of 100 W, it is designed for high-efficiency radio frequency amplification. The component utilizes a surface-mount SOT539B-5 package and supports operating temperatures from -40°C to +150°C.
Verify the specific suffix GXY against official Ampleon documentation to confirm tape-and-reel packaging and lead-free compliance. Ensure the requested quantity matches standard reel sizes. Cross-reference the full part number with the manufacturer's latest datasheet to validate pinout compatibility and thermal specifications before procurement.
Select this component for applications requiring high linearity and efficiency in the 920-960 MHz range. The 65 V supply rating suits standard telecom infrastructure voltages. Consider the SOT539B-5 thermal resistance when designing heatsinking solutions. Verify that the required output power aligns with the 100 W specification under the intended bias conditions.
This part belongs to Ampleon's BLP series of RF LDMOS transistors, which are widely used in wireless communications. The BLP0427M9S20GXY specifically targets UHF bands, offering a balance of power density and gain. It complements other devices in the portfolio designed for different frequency segments and power levels.
Check Ampleon's official substitution guide for direct replacements. Compare key parameters such as Vds, Id, and gain with alternative models like the BLP0427 series variants. Ensure mechanical footprint compatibility if replacing on existing PCBs.