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The BLP0427M9S20XY is an N-Channel LDMOS RF power transistor manufactured by Ampleon. It operates within a frequency range of 400 MHz to 2.7 GHz, delivering a typical output power of 20 W with a gain of 19 dB. The device requires a drain-source voltage (Vds) of 28 V and features a low on-resistance of 143 mOhms. Designed for surface-mount applications, it utilizes the TO-270-2F-1 package configuration. Key electrical parameters include a maximum operating temperature of +225°C and a gate-source threshold voltage of 2.5 V, ensuring reliable performance in high-frequency amplification tasks.
Verify component authenticity through authorized Ampleon distributors or certified supply chain partners. Confirm that the received units match the specific BLP0427M9S20XY designation and package type. Ensure handling procedures comply with moisture sensitivity level requirements to prevent damage during storage and assembly. Review the official datasheet for detailed thermal management guidelines and biasing conditions prior to integration into final designs.
Select this component when designing circuits requiring 20 W output power at frequencies extending to 2.7 GHz. The 28 V operating voltage suits standard RF power supply architectures. Consider the TO-270-2F-1 footprint for PCB layout constraints. Evaluate thermal dissipation capabilities against the +225°C junction temperature limit to ensure long-term reliability under continuous wave or pulsed operation conditions.
This part belongs to the BLP series of plastic LDMOS power transistors from Ampleon. These devices are engineered for general-purpose applications across the UHF and SHF bands. The BLP0427M9S20 variant represents a specific power and frequency optimization within this family, balancing output capability with gain performance for versatile RF system implementations.
Public confirmed substitute part numbers are not available in the provided documentation.