BLP05H6110XRGY

Overview

The BLP05H6110XRGY is an extremely rugged LDMOS power transistor designed for broadcast and industrial applications within the HF to 600 MHz band. It delivers a continuous wave output power of 110 W at 108 MHz with a drain efficiency of 75% and a gain of 27 dB under pulsed RF conditions (tp = 100 µs, duty cycle = 20%). The device operates at a drain-source voltage of 50 V and features a maximum drain-source breakdown voltage of 135 V. Packaged in a plastic heatsink small outline package (HSOP4F) corresponding to SOT1224-2, it includes integrated double-sided ESD protection and exhibits excellent thermal stability.

Feature Summary

• Designed for broadband operation across the HF to 600 MHz frequency range
• Features integrated double-sided electrostatic discharge (ESD) protection
• Capable of withstanding extreme load mismatch conditions exceeding VSWR 65:1 through all phases
• Compliant with Directive 2002/95/EC regarding the restriction of hazardous substances

Applications

• Industrial, scientific, and medical (ISM) RF power generators
• Broadcast transmitter applications including FM radio and VHF television
• CO2 plasma lasers and MRI medical scanners

Procurement Notes

Verify the specific ordering suffix against the manufacturer's current documentation to confirm lead time and availability status. Confirm RoHS compliance requirements match the project specifications. Ensure proper handling precautions are observed due to electrostatic sensitivity. Validate that the HSOP4F package dimensions align with the intended PCB footprint and thermal management design constraints.

Selection Notes

Select this component for high-power RF amplification requiring robustness against severe load mismatches. The device is suitable for Class-AB production test circuits operating at 50 V. Consider the thermal resistance characteristics when designing the heatsinking solution. Verify impedance matching networks against the typical push-pull impedance values provided in the datasheet for optimal performance at the target frequency.

Part Context

This part belongs to the BLP05H6xxx XR series of overmoulded plastic (OMP) RF power transistors from Ampleon. The series utilizes LDMOS technology and shares a common SOT1223/SOT1224 package outline family. Other members in this product line offer varying power outputs ranging from 35 W to 700 W CW, providing designers with a standardized platform for different power levels within the same frequency bands.

Replacement Considerations

Consult the official Ampleon replacement guide or distributor cross-reference lists for verified substitute part numbers. Do not assume functional equivalence based solely on package similarity. Verify that any alternative device meets the specific ruggedness and VSWR tolerance requirements defined in the original specification.