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The BLP05H6250XRY is a 250 W extremely rugged LDMOS power transistor designed for broadcast and industrial applications in the HF to 600 MHz band. It features integrated dual-sided ESD protection enabling Class C operation and complete switch-off capability. The device operates with a drain-source voltage of up to 135 V and a junction temperature limit of 225 °C. At 108 MHz with pulsed RF, it delivers 250 W output power with a typical gain of 27 dB and drain efficiency of 75%. Thermal resistance from junction to case is typically 0.31 K/W at Tj = 115 °C.
Verify the specific ordering suffix against official Ampleon documentation to confirm package variant. The 'XR' designation corresponds to the SOT1223-2 HSOP4F plastic heatsink small outline package with flat leads. Ensure compatibility with system thermal management requirements given the 225 °C maximum junction temperature rating.
Select this component for high-power RF amplification requiring robust performance under mismatched load conditions. The device supports both Class AB and Class C biasing configurations. Designers must account for the 135 V absolute maximum drain-source voltage and ensure adequate heat sinking to maintain junction temperatures within specified limits during continuous or pulsed operation.
The BLP05H6250XRY belongs to the BLP05H6250 series of power LDMOS transistors manufactured by Ampleon USA Inc. This family includes variants such as the BLP05H6250XRG, which utilizes the SOT1224-2 package with gull-wing leads. Both versions share identical electrical characteristics and are intended for similar high-frequency power amplification tasks.
The BLP05H6250XRG serves as a direct functional substitute with identical electrical specifications but utilizes the SOT1224-2 package instead of the SOT1223-2 package found on the XR variant.