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The BLP05H6350XRY is a 350 W extremely rugged LDMOS power transistor designed for broadcast and industrial applications in the HF to 600 MHz band. It operates with a drain-source voltage of 50 V and delivers a typical power gain of 27 dB at an output power of 350 W. The device achieves a drain efficiency of 75% under pulsed RF conditions (108 MHz, tp = 100 µs, δ = 20%). Key electrical parameters include a drain-source breakdown voltage of 135 V, gate-source threshold voltage ranging from 1.33 V to 2.33 V, and a thermal resistance from junction to case of 0.30 K/W.
Verify the specific ordering suffix against official Ampleon documentation to confirm package variant. The 'XR' designation corresponds to the SOT1223-2 flat lead HSOP4F package, while 'XRG' indicates the SOT1224-2 gull-wing variant. Confirm RoHS compliance status and current product status via the manufacturer's website before procurement.
Select this component for high-power RF amplification requiring extreme ruggedness in the HF to 600 MHz spectrum. Ensure the design accommodates the 50 V drain-source voltage limit and utilizes appropriate heatsinking given the 0.30 K/W thermal resistance. Verify that the application environment respects the absolute maximum ratings, particularly the 225 °C junction temperature limit.
This part belongs to the BLP05H6xxxXR series of overmoulded plastic LDMOS power transistors from Ampleon. The series provides a comprehensive portfolio for broadcast and ISM markets, utilizing a consistent SOT1223/SOT1224 package family to simplify bill-of-materials costs across different power levels within the same rugged technology platform.
Public confirmed substitute part numbers are not available in the provided source material.