BLP05H6350XRY

BLP05H6350XRY

$51.33
  • Description:RF MOSFET LDMOS 50V 4HSOPF
  • Series:-

SKU:790831a9e21c Category: Brand:

  
  • Quantity
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Product Detailed Parameters

  • Description:RF MOSFET LDMOS 50V 4HSOPF
  • Series:-
  • Mfr:Ampleon USA Inc.
  • Package:Tape & Reel (TR),Cut Tape (CT)
  • Technology:LDMOS
  • Frequency:108MHz
  • Gain:27dB
  • Voltage - Test:50 V
  • Current Rating (Amps):-
  • Noise Figure:-
  • Current - Test:100 mA
  • Power - Output:350W
  • Voltage - Rated:135 V
  • Grade:-
  • Qualification:-
  • Mounting Type:Surface Mount
  • Package / Case:SOT-1223-2
  • Supplier Device Package:4-HSOPF
  • Configuration:Dual, Common Source

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BLP05H6350XRY

Overview

The BLP05H6350XRY is a 350 W extremely rugged LDMOS power transistor designed for broadcast and industrial applications in the HF to 600 MHz band. It operates with a drain-source voltage of 50 V and delivers a typical power gain of 27 dB at an output power of 350 W. The device achieves a drain efficiency of 75% under pulsed RF conditions (108 MHz, tp = 100 µs, δ = 20%). Key electrical parameters include a drain-source breakdown voltage of 135 V, gate-source threshold voltage ranging from 1.33 V to 2.33 V, and a thermal resistance from junction to case of 0.30 K/W.

Feature Summary

  • Excellent ruggedness capable of withstanding load mismatch corresponding to VSWR > 65:1 through all phases
  • High efficiency and excellent thermal stability for reduced energy consumption
  • Integrated ESD protection for enhanced handling reliability
  • Designed for broadband operation across the HF to 600 MHz frequency range

Applications

  • Industrial, scientific and medical (ISM) applications
  • Broadcast transmitter applications

Procurement Notes

Verify the specific ordering suffix against official Ampleon documentation to confirm package variant. The 'XR' designation corresponds to the SOT1223-2 flat lead HSOP4F package, while 'XRG' indicates the SOT1224-2 gull-wing variant. Confirm RoHS compliance status and current product status via the manufacturer's website before procurement.

Selection Notes

Select this component for high-power RF amplification requiring extreme ruggedness in the HF to 600 MHz spectrum. Ensure the design accommodates the 50 V drain-source voltage limit and utilizes appropriate heatsinking given the 0.30 K/W thermal resistance. Verify that the application environment respects the absolute maximum ratings, particularly the 225 °C junction temperature limit.

Part Context

This part belongs to the BLP05H6xxxXR series of overmoulded plastic LDMOS power transistors from Ampleon. The series provides a comprehensive portfolio for broadcast and ISM markets, utilizing a consistent SOT1223/SOT1224 package family to simplify bill-of-materials costs across different power levels within the same rugged technology platform.

Replacement Considerations

Public confirmed substitute part numbers are not available in the provided source material.

BLP05H6350XRYBLP05H6350XRY
$51.33
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