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The BLP05H635XRY is a 35 W extremely rugged LDMOS power transistor designed for broadcast and industrial applications in the HF to 600 MHz band. It operates with a drain-source voltage of up to 135 V and features integrated double-sided ESD protection. The device delivers high efficiency, excellent thermal stability, and easy power control. Typical performance at 108 MHz includes a power gain of 27 dB and a drain efficiency of 75% under pulsed RF conditions. It is RoHS compliant and suitable for broadband operation.
Verify the specific package variant required, as the datasheet covers both the straight lead SOT1223-2 (BLP05H635XR) and gull-wing SOT1224-2 (BLP05H635XRG). Confirm that the ordering suffix matches the desired physical pin configuration before finalizing procurement. Ensure compliance with Ampleon's terms and conditions regarding product suitability and liability.
Select this component for designs requiring high power output in the HF to 600 MHz range. Consider the thermal resistance of 2.0 K/W and the maximum junction temperature of 225 °C when designing the heatsinking solution. Verify that the application environment does not exceed the absolute maximum ratings, particularly the 135 V drain-source voltage limit, to ensure long-term reliability.
This part belongs to Ampleon's H635X series of power LDMOS transistors. The series is engineered for high-power density and ruggedness in demanding RF environments. The BLP05H635XRY shares core electrical specifications with other variants in the family, differing primarily in package style and manufacturing revisions.
The datasheet lists BLP05H635XRG as a related variant with an identical electrical profile but a different gull-wing package (SOT1224-2). No other direct cross-model substitutes are documented in the provided source material.