BLP05M7200Y

Overview

The BLP05M7200 is a 200 W LDMOS power transistor designed for ISM and RF plasma lighting applications in the 425 MHz to 450 MHz frequency range. It operates with a drain-source voltage of 28 V and delivers 210 W output power at 440 MHz, achieving a typical drain efficiency of 77% and power gain of 21 dB. The device features integrated ESD protection, excellent thermal stability, and ruggedness capable of withstanding a VSWR of 20:1. Packaged in an HSOP4F (SOT1138-2) plastic heatsink small outline package, it complies with RoHS Directive 2002/95/EC.

Feature Summary

• High efficiency and excellent thermal stability
• Integrated ESD protection for enhanced reliability
• Designed specifically for ISM operation between 425 MHz and 450 MHz
• Input integration facilitates simple board design

Applications

• RF power amplifiers for CW applications in the 425 MHz to 450 MHz frequency range
• Industrial, Scientific, and Medical (ISM) equipment
• RF plasma lighting systems

Procurement Notes

Verify the specific ordering information against the manufacturer's official documentation before procurement. Confirm that the HSOP4F package version matches the required mechanical footprint. Ensure compliance with local import regulations and export control requirements applicable to semiconductor components. Check for any recent revisions to the product data sheet that may affect specifications or handling procedures.

Selection Notes

Select this component for high-power RF applications requiring robust performance in the 425 MHz to 450 MHz band. Consider its 200 W power capability and 77% efficiency for energy-sensitive designs. Evaluate the thermal resistance of 0.5 K/W to ensure adequate heat sinking solutions are implemented. Verify that the application environment does not exceed the absolute maximum ratings for junction temperature and voltage stress.

Part Context

The BLP05M7200 is part of Ampleon's portfolio of LDMOS power transistors, which are widely used in RF and microwave applications. Ampleon, established in 2015 through the spin-off from NXP Semiconductors, specializes in radio frequency power devices. This transistor supports various industrial and medical applications, leveraging advanced LDMOS technology for high performance and reliability in demanding environments.

Replacement Considerations

Consult the official Ampleon datasheet for verified substitute part numbers. Cross-reference electrical parameters such as power output, frequency range, and package dimensions when evaluating alternatives. Ensure any replacement maintains compatibility with existing thermal management and circuit impedance matching networks.

FAQ

What is the maximum load mismatch the BLP05M7200 can withstand?

The device can withstand a load mismatch corresponding to a VSWR of 20:1 through all phases under specified operating conditions.

Does the BLP05M7200 include electrostatic discharge protection?

Yes, the BLP05M7200 features integrated ESD protection, classified as C0A for Charged Device Model and 1C for Human Body Model.

What is the typical drain efficiency of the BLP05M7200 at 440 MHz?

At 440 MHz with 210 W output power, the typical drain efficiency is 77%.