BLP10H603AZ

Overview

The BLP10H603 is a 2.5 W plastic LDMOS power transistor designed for broadcast transmitter and ISM applications across frequencies from HF to 1400 MHz. It operates with a drain-source voltage of up to 104 V and delivers 2.5 W output power at 860 MHz with 22.8 dB gain and 62% drain efficiency. The device features integrated ESD protection, excellent ruggedness capable of withstanding a VSWR of 35:1, and high thermal stability. Packaged in an HVSON12 (SOT1352-1) surface-mount format, it supports easy power control and broadband operation.

Feature Summary

• Integrated electrostatic discharge (ESD) protection
• Excellent ruggedness supporting high VSWR conditions
• Broadband operational capability from HF to 1400 MHz
• High efficiency and excellent thermal stability

Applications

• Industrial, scientific and medical (ISM) applications
• Broadcast transmitter applications

Procurement Notes

Verify the specific package version SOT1352-1 against design requirements. Confirm RoHS compliance status as per Directive 2002/95/EC. Ensure handling procedures adhere to ESD sensitivity standards such as ANSI/ESD S20.20 or IEC/ST 61340-5 during assembly and testing.

Selection Notes

Select this component for broadband driver stages requiring stable performance between HF and 1400 MHz. The 104 V breakdown voltage and 2.5 W output power suit moderate power levels. Verify thermal management capabilities given the junction-to-case resistance of 9.9 K/W under specified operating conditions.

Part Context

This device belongs to Ampleon's LDMOS power transistor portfolio, specifically engineered for broadband RF amplification. It serves as a driver stage solution where wide bandwidth and robust load mismatch tolerance are critical for maintaining signal integrity in transmission systems.

Replacement Considerations

No direct public substitute part numbers are documented in the provided datasheet.