BLP10H605AZ

BLP10H605AZ

  • Description:RF MOSFET LDMOS 50V 12HVSON
  • Series:-

SKU:6e82fd3f46c1 Category: Brand:

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Product Detailed Parameters

  • Description:RF MOSFET LDMOS 50V 12HVSON
  • Series:-
  • Mfr:Ampleon USA Inc.
  • Package:Tape & Reel (TR),Cut Tape (CT)
  • Technology:LDMOS
  • Frequency:860MHz
  • Gain:22.4dB
  • Voltage - Test:50 V
  • Current Rating (Amps):-
  • Noise Figure:-
  • Current - Test:30 mA
  • Power - Output:5W
  • Voltage - Rated:104 V
  • Grade:-
  • Qualification:-
  • Mounting Type:Surface Mount
  • Package / Case:12-VDFN Exposed Pad
  • Supplier Device Package:12-HVSON (6x5)
  • Configuration:Dual, Common Source

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BLP10H605AZ

Overview

The BLP10H605 is a 5 W plastic LDMOS power transistor designed for broadcast transmitter and ISM applications across frequencies from HF to 1400 MHz. It operates with a drain-source voltage of 104 V and delivers 5 W output power at 860 MHz with 22.4 dB gain and 59.6% efficiency. The device features integrated dual-side ESD protection, excellent ruggedness capable of withstanding a VSWR of 35:1, and high thermal stability. Packaged in the SOT1352-1 (HVSON12) format, it supports broadband operation and includes RoHS compliance.

Feature Summary

  • Integrated dual side ESD protection
  • Excellent ruggedness withstanding VSWR = 35 : 1
  • High efficiency and thermal stability
  • Broadband operation from HF to 1400 MHz

Applications

  • Industrial, scientific and medical applications
  • Broadcast transmitter applications

Procurement Notes

Verify the specific ordering suffix against the manufacturer's current documentation to ensure correct package version and reel specifications. Confirm that the procurement channel provides original Ampleon products to avoid counterfeit components. Check the latest datasheet revision for any updates to limiting values or recommended operating conditions before finalizing purchase orders.

Selection Notes

Select this component for driver stages requiring 5 W output power within the HF to 1400 MHz range. Ensure the design accommodates the HVSON12 package dimensions and thermal requirements, specifically the junction-to-case thermal resistance of 5.5 K/W. Verify that the application circuit can maintain the recommended operating area to prevent exceeding the absolute maximum ratings during transient conditions.

Part Context

This part belongs to the BLP series of LDMOS power transistors manufactured by Ampleon. It serves as a broadband driver transistor suitable for linear amplification tasks. The device utilizes a plastic thermal enhanced very thin small outline package without leads, providing a compact solution for RF power applications where space and thermal performance are critical constraints.

Replacement Considerations

Consult official Ampleon substitution guides for verified alternatives. No direct public substitute part numbers are confirmed in the provided documentation.

BLP10H605AZBLP10H605AZ

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