BLP10H610AZ

Overview

The BLP10H610 is a 10 W plastic LDMOS power transistor designed for broadcast transmitter and ISM applications across frequencies from HF to 1400 MHz. It operates with a drain-source voltage of 104 V and features integrated ESD protection. The device utilizes an HVSON12 package (SOT1352-1) with dimensions of 5 x 6 x 0.85 mm. Key electrical characteristics include a typical power gain of 22 dB at 860 MHz, a drain efficiency of 60%, and a thermal resistance from junction to case of 3.5 K/W. The component supports Class-AB operation with excellent ruggedness against load mismatches.

Feature Summary

• Broadband operational capability spanning from High Frequency up to 1400 MHz
• Integrated ElectroStatic Discharge (ESD) protection circuitry
• High efficiency performance combined with excellent thermal stability
• Robust ruggedness capable of withstanding significant load mismatch conditions

Applications

• Industrial, scientific and medical (ISM) equipment
• Broadcast transmitter driver stages
• Digital Video Broadcast - Terrestrial (DVB-T) systems

Procurement Notes

Verify the specific ordering information and package version against the manufacturer's current product data sheet before finalizing procurement. Confirm that the required documentation aligns with the latest revision history provided by Ampleon. Ensure all handling precautions for electrostatic sensitive devices are strictly followed during storage and assembly processes to maintain component integrity.

Selection Notes

Select this component for broadband driver applications requiring high efficiency and ruggedness within the HF to 1400 MHz range. Evaluate the thermal management requirements based on the specified junction-to-case thermal resistance. Ensure the design accommodates the HVSON12 package dimensions and pin configuration for proper PCB layout and heat dissipation strategies.

Part Context

This device belongs to the BLP series of LDMOS power transistors manufactured by Ampleon. It serves as a broadband driver stage suitable for various RF transmission environments. The technology leverages Laterally Diffused Metal-Oxide Semiconductor construction to deliver reliable performance in demanding broadcast and industrial applications.

Replacement Considerations

Consult official Ampleon documentation for verified substitute part numbers. Do not assume compatibility with other models without checking pinout, electrical specifications, and package dimensions.

FAQ

What is the maximum drain-source voltage rating?

The absolute maximum drain-source voltage (VDS) is rated at 104 V.

Does the BLP10H610 include ESD protection?

Yes, the device features integrated ElectroStatic Discharge (ESD) protection.

What package type does this transistor use?

It uses the HVSON12 plastic thermal enhanced very thin small outline package, also known as SOT1352-1.