BLP10H6120PGY

BLP10H6120PGY

  • Description:RF MOSFET LDMOS 50V 4HSOP
  • Series:-

SKU:2ea24be538a2 Category: Brand:

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Product Detailed Parameters

  • Description:RF MOSFET LDMOS 50V 4HSOP
  • Series:-
  • Mfr:Ampleon USA Inc.
  • Package:Tape & Reel (TR)
  • Technology:LDMOS
  • Frequency:1GHz
  • Gain:18dB
  • Voltage - Test:50 V
  • Current Rating (Amps):1.4µA
  • Noise Figure:-
  • Current - Test:80 mA
  • Power - Output:120W
  • Voltage - Rated:110 V
  • Grade:-
  • Qualification:-
  • Mounting Type:Surface Mount
  • Package / Case:4-BESOP (0.173", 4.40mm Width)
  • Supplier Device Package:4-HSOP
  • Configuration:-

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BLP10H6120PGY

Overview

The BLP10H6120PG is a 120 W LDMOS power transistor designed for broadcast and industrial applications in the HF to 1000 MHz band. It operates with a drain-source voltage of 50 V and features integrated dual-sided ESD protection, enabling Class C operation and complete switch-off capability. The device exhibits excellent ruggedness, high efficiency, and thermal stability. At 720 MHz pulsed RF, it delivers 120 W output power with 18 dB gain and 72% drain efficiency. In CW mode at 915 MHz, it provides 143 W output with 15.1 dB gain and 62.3% efficiency. The component is housed in an SOT1224-2 package.

Feature Summary

  • Integrated dual-sided ESD protection enables Class C operation and complete switch-off
  • Designed for broadband operation across the HF to 1000 MHz frequency range
  • Excellent ruggedness capable of withstanding severe load mismatches
  • High efficiency and excellent thermal stability for reliable performance

Applications

  • Industrial, scientific and medical (ISM) applications
  • Broadcast transmitter applications

Procurement Notes

Verify the specific ordering suffix against official Ampleon documentation to ensure correct package selection. Confirm that the intended application environment complies with the absolute maximum ratings defined in the datasheet. Ensure proper electrostatic discharge handling procedures are followed during assembly and testing to prevent damage to the sensitive internal structures.

Selection Notes

Select this component for designs requiring robust RF power amplification in the HF to 1000 MHz spectrum. Consider the thermal resistance characteristics when designing heat dissipation solutions. Verify impedance matching networks against the typical push-pull impedance data provided for the target operating frequency to optimize power transfer and efficiency.

Part Context

This part belongs to the Ampleon BLP series of power LDMOS transistors. It shares design similarities with the BLP10H6120P variant, differing primarily in the package configuration. Both variants serve the same functional role in broadcast and industrial RF systems, offering comparable electrical performance metrics within their respective physical form factors.

Replacement Considerations

The BLP10H6120P is the direct alternative variant, distinguished by its HSOP4F (SOT1223-2) flat lead package compared to the standard HSOP4 (SOT1224-2) package of the PG version. Electrical specifications remain identical; however, mechanical footprint and mounting requirements differ significantly between the two packages.

BLP10H6120PGYBLP10H6120PGY

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