BLP10H6120PY

Overview

The BLP10H6120P is a dual-section LDMOS power transistor designed for broadcast and industrial applications across the HF to 1000 MHz band. It operates with a drain-source voltage of 110 V and delivers up to 160 W output power at 915 MHz under pulsed conditions, or 143 W in continuous wave mode. The device features a typical power gain of 18 dB and drain efficiency reaching 72% at 720 MHz. Packaged in an SOT1223-2 HSOP4F plastic heatsink small outline package, it integrates dual-sided ESD protection and exhibits excellent ruggedness against load mismatches exceeding 40:1 VSWR.

Feature Summary

• Integrated dual-sided electrostatic discharge (ESD) protection enabling Class C operation and complete switch-off capability.
• High ruggedness capable of withstanding severe load mismatches corresponding to VSWR greater than 40:1 through all phases.
• Designed for broadband operation spanning from High Frequency (HF) up to 1000 MHz.
• Excellent thermal stability combined with high efficiency characteristics.

Applications

• Industrial, scientific, and medical (ISM) RF applications
• Broadcast transmitter systems

Procurement Notes

Verify the specific ordering suffix to confirm the package variant, as the 'P' designation corresponds to the flat lead HSOP4F (SOT1223-2) package. Confirm compliance with Directive 2002/95/EC regarding hazardous substances if required by the target application environment. Ensure handling procedures adhere to ANSI/ESD S20.20 standards due to the component's sensitivity to electrostatic discharge.

Selection Notes

Select this component for designs requiring robust performance in the HF to 1000 MHz range with high power density. The device supports both Class AB and Class C biasing configurations. Designers must account for the thermal resistance of 0.6 K/W from junction to case when calculating heat dissipation requirements. Verify that the input and output impedance matching networks align with the simulated push-pull impedances provided in the datasheet for optimal power transfer.

Part Context

This part belongs to Ampleon's portfolio of LDMOS power transistors tailored for broadcast and industrial sectors. It serves as a high-power solution within the HF spectrum, offering a balance between output power and efficiency. The product line emphasizes ruggedness and ease of power control, making it suitable for demanding environments where reliability under mismatched load conditions is critical.

Replacement Considerations

The BLP10H6120PG is a related variant utilizing the SOT1224-2 package. Substitution requires verification of mechanical footprint compatibility and pinout alignment, as the lead configurations differ between the flat lead and standard small outline packages.

FAQ

What is the maximum load mismatch the BLP10H6120P can withstand?

The device is capable of withstanding a load mismatch corresponding to a Voltage Standing-Wave Ratio (VSWR) greater than 40:1 through all phases during class-AB operation.

Does the BLP10H6120P support Class C operation?

Yes, the integrated dual-sided ESD protection enables Class C operation and allows for the complete switch-off of the transistor.

What is the thermal resistance from junction to case?

The thermal resistance from junction to case (Rth(j-c)) is typically 0.6 K/W when measured under RF conditions at a junction temperature of 125 °C.