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The BLP10H630PGY is a 30 W LDMOS power transistor designed for broadcast and industrial applications in the HF to 1000 MHz band. It features a drain-source voltage of 110 V, gate-source threshold voltage ranging from 1.25 V to 2.25 V, and a thermal resistance from junction to case of 2.0 K/W. The device operates with a typical power gain of 18 dB and drain efficiency of 72% at 720 MHz under pulsed RF conditions. It utilizes an SOT1224-2 package (HSOP4) and includes integrated dual-sided ESD protection.
Verify the specific ordering suffix against official Ampleon documentation to confirm package variant and compliance status. Ensure that the requested component matches the exact part number specifications provided in the datasheet before finalizing procurement orders.
Select this component for designs requiring high efficiency and ruggedness in the HF to 1000 MHz spectrum. Consider the 110 V drain-source voltage rating and thermal characteristics when designing heat dissipation solutions for continuous or pulsed operation scenarios.
This device belongs to the BLP10H series of power LDMOS transistors manufactured by Ampleon. It shares functional similarities with other models in the lineup but is distinctively characterized by its 30 W output power capability and specific broadband frequency coverage suitable for demanding broadcast and industrial environments.
Consult the official Ampleon product selection guide for verified substitute part numbers. Do not assume interchangeability with other LDMOS devices without confirming electrical parameters and pin configurations.