BLP10H630PY

Overview

The BLP10H630P is a 30 W LDMOS power transistor designed for broadcast and industrial applications across the HF to 1000 MHz band. It features integrated dual-sided ESD protection, enabling Class C operation and complete switch-off capability. The device offers excellent ruggedness, high efficiency, and thermal stability. Key electrical parameters include a drain-source voltage of 110 V, a junction temperature limit of 225 °C, and a typical power gain of 18 dB at 720 MHz with 30 W output power. Drain efficiency reaches 72% under pulsed RF conditions (tp = 100 µs, δ = 20%). The component is available in HSOP4F (SOT1223-2) and HSOP4 (SOT1224-2) plastic heatsink packages.

Feature Summary

• Integrated dual-sided ESD protection supports Class C operation and full transistor switch-off
• Designed for broadband operation spanning from HF frequencies up to 1000 MHz
• High junction temperature rating of 225 °C ensures robust thermal performance

Applications

• Industrial, scientific and medical (ISM) applications
• Broadcast transmitter applications

Procurement Notes

Verify the specific package variant required for the design, as the BLP10H630P designation corresponds to the flat-lead HSOP4F (SOT1223-2) package, while the PG suffix denotes the standard HSOP4 (SOT1224-2) version. Confirm that the application environment adheres to the absolute maximum ratings, particularly regarding the 225 °C junction temperature limit, to ensure long-term reliability. Ensure proper ESD handling procedures are followed during assembly due to the sensitivity classification.

Selection Notes

Select this component for designs requiring a 30 W output power level within the HF to 1000 MHz frequency range. The device is suitable for both Class AB and Class C amplifier topologies due to its integrated ESD protection. Designers must account for the specific impedance values provided for push-pull configurations at 720 MHz. Verify that the thermal management solution can maintain the junction temperature below the 225 °C maximum limit under continuous or pulsed operating conditions.

Part Context

The BLP10H630P belongs to Ampleon's portfolio of LDMOS power transistors engineered for high-efficiency RF amplification. It utilizes Laterally Diffused Metal-Oxide Semiconductor technology to deliver stable performance in demanding broadcast and industrial environments. The product line emphasizes ruggedness against load mismatches, supporting VSWR ratios greater than 40:1 through all phases in Class AB operation.

Replacement Considerations

The BLP10H630PG serves as the pin-compatible alternative featuring the SOT1224-2 package outline instead of the SOT1223-2 flat leads. Both variants share identical electrical characteristics and functionality; the selection depends solely on the PCB footprint and mechanical mounting requirements.