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The BLP10H660PG is a 60 W LDMOS power transistor designed for broadcast and industrial applications in the HF to 1000 MHz band. It features integrated dual-sided ESD protection, excellent ruggedness, high efficiency, and thermal stability. The device operates with a drain-source voltage of up to 110 V and a junction temperature limit of 225 °C. At 720 MHz with pulsed RF conditions (tp = 100 µs; δ = 20%), it delivers 60 W output power with 18 dB gain and 72% drain efficiency at VDS = 50 V. It is housed in an HSOP4 plastic package (SOT1224-2) suitable for surface mounting.
Verify the specific ordering suffix against the manufacturer's current documentation to confirm the exact package variant. Ensure that handling procedures strictly adhere to Electrostatic Discharge (ESD) precautions, as the component carries CDM Class C1 and HBM Class 1C sensitivity ratings. Confirm compliance with RoHS Directive 2002/95/EC requirements prior to integration into final assemblies.
Select this component for designs requiring robust performance in the HF to 1000 MHz spectrum. The device supports both Class AB and Class C operations due to its integrated ESD protection. Designers must account for the maximum junction temperature of 225 °C and ensure adequate thermal management to maintain reliability under continuous or pulsed RF stress conditions.
This part belongs to the BLP10H660 series from Ampleon, which includes the BLP10H660P variant utilizing the SOT1223-2 package. Both devices share identical electrical specifications and are intended for similar broadcast and ISM applications. The PG suffix specifically denotes the HSOP4 plastic heatsink small outline package configuration.
The BLP10H660P serves as a direct functional equivalent within the same product family, differing only in the physical package type (SOT1223-2 versus SOT1224-2). No other cross-model substitutes are documented in the provided datasheet.