BLP15H9S100GXY

Overview

The BLP15H9S100GXY is a 100 W LDMOS driver transistor manufactured by Ampleon USA Inc. It operates in the frequency range from HF to 2 GHz and features a TO-270-2G-1 package. Key electrical parameters include a drain-source breakdown voltage of 106 V, a typical power gain of 19 dB at 1400 MHz, and a drain efficiency of 56% under pulsed RF conditions. The device has a thermal resistance from junction to case of 0.57 K/W and supports a maximum junction temperature of 225 °C.

Feature Summary

• Designed for broadband operation across HF to 2 GHz frequencies
• Integrated dual-sided ESD protection for enhanced reliability
• Excellent ruggedness suitable for digital and analog transmitter applications
• High power gain and high efficiency for effective signal amplification

Applications

• Broadcast transmitter applications
• Industrial, scientific and medical (ISM) applications
• Digital and analog transmitter systems operating up to 2 GHz

Procurement Notes

Verify the specific ordering suffix GXY against the manufacturer's current documentation to confirm packing details. The datasheet indicates this part number corresponds to TR7 packing with a minimum orderable quantity of 100 pieces. Ensure compatibility with dry pack requirements specified for this packaging type before finalizing procurement orders.

Selection Notes

Select this component for designs requiring a 100 W output capability within the HF to 2 GHz spectrum. Consider the TO-270-2G-1 package dimensions and the 0.57 K/W thermal resistance for adequate heatsinking. Verify that the application environment respects the absolute maximum ratings, particularly the 106 V drain-source voltage limit and the 225 °C junction temperature threshold.

Part Context

This device belongs to the BLP15 series of power LDMOS transistors from Ampleon. It serves as a driver stage component designed to handle significant power levels while maintaining stability and efficiency. The product line targets robust performance in demanding broadcast and industrial RF environments where wide bandwidth and high reliability are critical operational requirements.

Replacement Considerations

Consult the official Ampleon datasheet for confirmed substitute part numbers. Cross-referencing should be performed based on matching electrical specifications, package outline dimensions, and thermal characteristics to ensure functional equivalence in existing circuit designs.

FAQ

What is the maximum junction temperature for the BLP15H9S100G?

The maximum junction temperature (Tj) is 225 °C.

Does the BLP15H9S100G include ESD protection?

Yes, the device features integrated dual-sided ESD protection.

What is the typical power gain at 1400 MHz?

The typical power gain (Gp) is 19 dB when tested with pulsed RF at 1400 MHz.