BLP15H9S100XY

BLP15H9S100XY

$16.97
  • Description:RF MOSFET LDMOS 50V SOT1482-1
  • Series:-

SKU:301288c45d6f Category: Brand:

  
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Product Detailed Parameters

  • Description:RF MOSFET LDMOS 50V SOT1482-1
  • Series:-
  • Mfr:Ampleon USA Inc.
  • Package:Tape & Reel (TR)
  • Technology:LDMOS
  • Frequency:2GHz
  • Gain:19dB
  • Voltage - Test:50 V
  • Current Rating (Amps):1.4µA
  • Noise Figure:-
  • Current - Test:400 mA
  • Power - Output:100W
  • Voltage - Rated:106 V
  • Grade:-
  • Qualification:-
  • Mounting Type:Surface Mount
  • Package / Case:SOT-1482-1
  • Supplier Device Package:SOT-1482-1
  • Configuration:-

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BLP15H9S100XY

Overview

The BLP15H9S100XY is a 100 W LDMOS driver transistor manufactured by Ampleon. It operates in the frequency range from HF to 2 GHz and features a TO-270-2F-1 package with an exposed heatsink. The device has a drain-source breakdown voltage of 106 V, a gate-source threshold voltage of 2.0 V typical, and a drain-source on-state resistance of 0.30 Ω. At 1400 MHz pulsed RF operation, it delivers 100 W output power with 19 dB gain and 63% drain efficiency. Thermal resistance from junction to case is 0.57 K/W at Tcase = 70 °C.

Feature Summary

  • Designed for broadband operation across HF to 2 GHz
  • Integrated dual-sided ESD protection
  • Excellent ruggedness capable of withstanding high VSWR loads
  • High power gain and drain efficiency

Applications

  • Broadcast transmitter applications
  • Industrial, scientific and medical (ISM) applications
  • Digital and analog transmitter applications

Procurement Notes

Verify the specific ordering suffix XY against the manufacturer's current documentation to confirm packaging details. The datasheet indicates this part number corresponds to a reel packing format with a minimum orderable quantity of 100 pieces. Ensure compliance with RoHS requirements as specified in the product details section of the official Ampleon website before finalizing procurement orders.

Selection Notes

Select this component for designs requiring high power density and broadband performance up to 2 GHz. Verify thermal management capabilities given the 0.57 K/W junction-to-case resistance. Ensure the application circuit supports Class-AB operation conditions, specifically maintaining the recommended quiescent drain current of 30 mA for optimal linearity and efficiency metrics.

Part Context

This device belongs to the BLP15 series of power LDMOS transistors designed for robust RF amplification. It serves as a driver stage suitable for both digital modulation schemes like DVB-T and continuous wave analog signals. The TO-270-2F-1 package facilitates surface mounting while providing efficient heat dissipation through the exposed metal flange connected to the drain terminal.

Replacement Considerations

Consult the official Ampleon replacement guide for verified substitutes. Cross-reference pinout compatibility and thermal characteristics when evaluating alternative components.

BLP15H9S100XYBLP15H9S100XY
$16.97
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