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The BLP15H9S100Z is a 100 W LDMOS driver transistor manufactured by Ampleon, designed for broadcast and industrial applications. It operates in the frequency range from HF to 2 GHz with excellent ruggedness suitable for digital and analog transmitters. The device features a TO-270-2F-1 package with drain connected to the flange. Key electrical parameters include a drain-source voltage of 106 V maximum, gate-source voltage limits of -6 V to +11 V, and a junction temperature rating up to 225 °C. Typical performance at 1400 MHz pulsed RF includes 100 W output power, 19 dB gain, and 63% drain efficiency.
Verify the specific ordering suffix against the manufacturer's current data sheet to confirm packaging details. The Z suffix corresponds to a reel packing description of TR13 with a minimum orderable quantity of 500 pieces. Ensure compliance with RoHS requirements as specified in the product details. Confirm that the TO-270-2F-1 package outline matches the design constraints before finalizing procurement orders.
Select this component for designs requiring high power output up to 100 W in the HF to 2 GHz range. Consider the thermal resistance of 0.57 K/W when designing heat sinking solutions. The device requires careful biasing management due to its sensitivity to electrostatic discharge. Verify that the application circuit can handle the specified limiting values for drain-source and gate-source voltages to prevent permanent damage.
The BLP15H9S100Z belongs to the BLP15 series of power LDMOS transistors from Ampleon. This series is engineered for robust performance in demanding RF environments. The Z variant specifically denotes the reel packaging format, distinguishing it from cut tape or other packing options within the same electrical specification family.
Check for BLP15H9S100XY which shares identical electrical characteristics but differs in packaging (TR7, 100-fold). Ensure any substitute maintains the TO-270-2F-1 footprint and pinout configuration to fit existing board layouts without modification.