BLP15H9S100Z

BLP15H9S100Z

$22.29
  • Description:RF MOSFET LDMOS 50V SOT1482-1
  • Series:-

SKU:5b376f1b28ad Category: Brand:

  
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Product Detailed Parameters

  • Description:RF MOSFET LDMOS 50V SOT1482-1
  • Series:-
  • Mfr:Ampleon USA Inc.
  • Package:Tape & Reel (TR),Cut Tape (CT)
  • Technology:LDMOS
  • Frequency:1.5GHz
  • Gain:19dB
  • Voltage - Test:50 V
  • Current Rating (Amps):1.4µA
  • Noise Figure:-
  • Current - Test:30 mA
  • Power - Output:100W
  • Voltage - Rated:106 V
  • Grade:-
  • Qualification:-
  • Mounting Type:Surface Mount
  • Package / Case:SOT-1482-1
  • Supplier Device Package:SOT-1482-1
  • Configuration:-

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BLP15H9S100Z

Overview

The BLP15H9S100Z is a 100 W LDMOS driver transistor manufactured by Ampleon, designed for broadcast and industrial applications. It operates in the frequency range from HF to 2 GHz with excellent ruggedness suitable for digital and analog transmitters. The device features a TO-270-2F-1 package with drain connected to the flange. Key electrical parameters include a drain-source voltage of 106 V maximum, gate-source voltage limits of -6 V to +11 V, and a junction temperature rating up to 225 °C. Typical performance at 1400 MHz pulsed RF includes 100 W output power, 19 dB gain, and 63% drain efficiency.

Feature Summary

  • Designed for broadband operation across HF to 2 GHz frequencies
  • Integrated dual-sided ESD protection for enhanced reliability
  • Excellent ruggedness capable of withstanding high VSWR loads
  • High power gain and efficiency for effective power amplification

Applications

  • Broadcast transmitter applications
  • Industrial, scientific and medical (ISM) applications
  • Digital and analog transmitter systems

Procurement Notes

Verify the specific ordering suffix against the manufacturer's current data sheet to confirm packaging details. The Z suffix corresponds to a reel packing description of TR13 with a minimum orderable quantity of 500 pieces. Ensure compliance with RoHS requirements as specified in the product details. Confirm that the TO-270-2F-1 package outline matches the design constraints before finalizing procurement orders.

Selection Notes

Select this component for designs requiring high power output up to 100 W in the HF to 2 GHz range. Consider the thermal resistance of 0.57 K/W when designing heat sinking solutions. The device requires careful biasing management due to its sensitivity to electrostatic discharge. Verify that the application circuit can handle the specified limiting values for drain-source and gate-source voltages to prevent permanent damage.

Part Context

The BLP15H9S100Z belongs to the BLP15 series of power LDMOS transistors from Ampleon. This series is engineered for robust performance in demanding RF environments. The Z variant specifically denotes the reel packaging format, distinguishing it from cut tape or other packing options within the same electrical specification family.

Replacement Considerations

Check for BLP15H9S100XY which shares identical electrical characteristics but differs in packaging (TR7, 100-fold). Ensure any substitute maintains the TO-270-2F-1 footprint and pinout configuration to fit existing board layouts without modification.

BLP15H9S100ZBLP15H9S100Z
$22.29
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