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The BLP15H9S10GZ is a 10 W LDMOS driver transistor manufactured by Ampleon, designed for broadband operation from HF to 2 GHz. It features a TO-270-2G-1 surface-mount package with an exposed heatsink. Key electrical parameters include a drain-source voltage of 50 V and a breakdown voltage of 106 V. At 1400 MHz pulsed RF, it delivers 10 W output power with 21 dB gain and 65% drain efficiency. The device exhibits excellent ruggedness, supporting a VSWR of 30:1 through all phases under specific test conditions.
Verify the ordering suffix GZ corresponds to the TR13 packing description with a minimum orderable quantity of 500 pieces in dry pack format. Confirm RoHS compliance status via official Ampleon product details before procurement. Ensure storage temperature limits are respected to maintain device reliability during supply chain transit.
Select this component for driver stages requiring 10 W output at frequencies up to 2 GHz. The TO-270-2G-1 package facilitates surface mount integration with thermal management via the exposed heatsink. Verify that the application circuit can support the required gate-source voltage range and quiescent current settings for optimal Class-AB performance.
The BLP15H9S10GZ belongs to the BLP15H9S family of power LDMOS transistors from Ampleon. This series targets broadcast and industrial sectors, offering high reliability and ruggedness. The 'G' suffix indicates the TO-270-2G-1 package variant, distinct from the TO-270-2F-1 package used in other family members like the BLP15H9S10Z.
The BLP15H9S10GXY serves as a compatible alternative within the same package type but differs in packing configuration (TR7). Direct substitution requires verifying that the mechanical footprint and thermal characteristics remain identical for the specific PCB design constraints.