BLP15H9S10Z

BLP15H9S10Z

$18.91
  • Description:RF MOSFET LDMOS 50V SOT1482-1
  • Series:BLP

SKU:cdb3bc0e00cc Category: Brand:

  
  • Quantity
    • -
    • +
  •    
ChipApex WhatsApp

Consult the customer manager about the wholesale price.

consultation hotline:86-132-6715-2157

email:[email protected]
Contact the product manager for consultation. One-stop consultation is available.


Do you want a lower wholesale price? Please send us your inquiry and we will reply immediately.

Submitting!
Submission successful!
Submission failed!
Email error!
Phone number error!

Product Detailed Parameters

  • Description:RF MOSFET LDMOS 50V SOT1482-1
  • Series:BLP
  • Mfr:Ampleon USA Inc.
  • Package:Tape & Reel (TR),Cut Tape (CT)
  • Technology:LDMOS
  • Frequency:1.4GHz
  • Gain:22dB
  • Voltage - Test:50 V
  • Current Rating (Amps):1.4µA
  • Noise Figure:-
  • Current - Test:60 mA
  • Power - Output:10W
  • Voltage - Rated:104 V
  • Grade:-
  • Qualification:-
  • Mounting Type:Surface Mount
  • Package / Case:SOT-1482-1
  • Supplier Device Package:SOT-1482-1
  • Configuration:Dual, Common Source

Download product information

BLP15H9S10Z

Overview

The BLP15H9S10Z is a 10 W LDMOS driver transistor designed for broadcast and industrial applications across the HF to 2 GHz frequency range. It operates with a drain-source voltage of 50 V and delivers a typical power gain of 21 dB at 1400 MHz under pulsed RF conditions. The device features a TO-270-2F-1 surface-mount package with an exposed heatsink for thermal management. Key electrical parameters include a drain-source breakdown voltage of 106 V, a gate-source threshold voltage ranging from 1.5 V to 2.5 V, and a thermal resistance from junction to case of 5.1 K/W. It exhibits excellent ruggedness, supporting load mismatches up to VSWR 30:1.

Feature Summary

  • Designed for broadband operation in digital and analog transmitter applications
  • Integrated dual-sided ESD protection for enhanced handling reliability
  • High power gain and efficiency suitable for driver stages
  • Excellent stability and ruggedness under high VSWR conditions

Applications

  • Broadcast transmitter applications
  • Industrial, scientific and medical (ISM) applications
  • Digital and analog transmitter driver stages from HF to 2 GHz

Procurement Notes

Verify the specific ordering suffix against the manufacturer's current data sheet to ensure correct packaging and minimum order quantities. Confirm RoHS compliance status through official product details before procurement. Ensure proper ESD handling precautions are observed during storage and assembly, as the component carries CDM Class C2B and HBM Class 1C ratings.

Selection Notes

Select this component for applications requiring a 10 W output power level within the HF to 2 GHz spectrum. Consider the TO-270-2F-1 package dimensions and thermal requirements when designing the PCB layout. Verify that the operating drain-source voltage and quiescent current align with the specified characteristics for optimal gain and efficiency performance.

Part Context

The BLP15H9S10Z belongs to the Ampleon BLP15H9S series of power LDMOS transistors. This series includes variants such as the BLP15H9S30 and BLP15H9S100, which offer higher power outputs. All devices in this family share similar ruggedness characteristics and are intended for broadband driver applications in broadcast and industrial sectors.

Replacement Considerations

The BLP15H9S10GZ serves as a pin-compatible alternative within the same series, utilizing the TO-270-2G-1 package. Both components share identical electrical specifications and functionality. Verify package outline compatibility and thermal interface requirements when substituting between the F and G package variants.

BLP15H9S10ZBLP15H9S10Z
$18.91
Buy Now