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The BLP15H9S10Z is a 10 W LDMOS driver transistor designed for broadcast and industrial applications across the HF to 2 GHz frequency range. It operates with a drain-source voltage of 50 V and delivers a typical power gain of 21 dB at 1400 MHz under pulsed RF conditions. The device features a TO-270-2F-1 surface-mount package with an exposed heatsink for thermal management. Key electrical parameters include a drain-source breakdown voltage of 106 V, a gate-source threshold voltage ranging from 1.5 V to 2.5 V, and a thermal resistance from junction to case of 5.1 K/W. It exhibits excellent ruggedness, supporting load mismatches up to VSWR 30:1.
Verify the specific ordering suffix against the manufacturer's current data sheet to ensure correct packaging and minimum order quantities. Confirm RoHS compliance status through official product details before procurement. Ensure proper ESD handling precautions are observed during storage and assembly, as the component carries CDM Class C2B and HBM Class 1C ratings.
Select this component for applications requiring a 10 W output power level within the HF to 2 GHz spectrum. Consider the TO-270-2F-1 package dimensions and thermal requirements when designing the PCB layout. Verify that the operating drain-source voltage and quiescent current align with the specified characteristics for optimal gain and efficiency performance.
The BLP15H9S10Z belongs to the Ampleon BLP15H9S series of power LDMOS transistors. This series includes variants such as the BLP15H9S30 and BLP15H9S100, which offer higher power outputs. All devices in this family share similar ruggedness characteristics and are intended for broadband driver applications in broadcast and industrial sectors.
The BLP15H9S10GZ serves as a pin-compatible alternative within the same series, utilizing the TO-270-2G-1 package. Both components share identical electrical specifications and functionality. Verify package outline compatibility and thermal interface requirements when substituting between the F and G package variants.