BLP15H9S30Z

Overview

The BLP15H9S30Z is a 30 W LDMOS driver transistor designed for broadcast and industrial applications. It operates in the frequency range from HF to 2 GHz, offering excellent ruggedness suitable for digital and analog transmitter environments. The device features high efficiency and high power gain, with a typical drain efficiency of 63% at 1400 MHz pulsed RF operation. It utilizes a TO-270-2F-1 surface-mount package and includes integrated dual-sided ESD protection. Key electrical parameters include a drain-source breakdown voltage of 106 V, a gate-source threshold voltage of 2.0 V typ, and an on-state resistance of 0.89 Ω.

Feature Summary

• Designed for broadband operation across HF to 2 GHz frequencies
• Integrated dual-sided electrostatic discharge (ESD) protection
• Excellent ruggedness capable of withstanding high VSWR loads
• High power gain and high efficiency for reduced thermal design challenges

Applications

• Broadcast transmitter applications
• Industrial, scientific and medical (ISM) applications
• Digital and analog transmitter applications

Procurement Notes

Verify the specific ordering suffix against the manufacturer's current data sheet to ensure correct packaging configuration. The Z suffix corresponds to a tape and reel format with a minimum orderable quantity of 500 pieces in dry pack. Confirm RoHS compliance status directly via official product details before finalizing procurement specifications.

Selection Notes

Select this component for designs requiring a 30 W output power level within the HF to 2 GHz spectrum. Ensure the application circuit can support the required 50 V drain supply and manage the thermal resistance of 1.9 K/W junction-to-case. Verify that the load impedance matches the production test conditions for optimal gain and efficiency performance.

Part Context

This part belongs to the Ampleon BLP15 series of power LDMOS transistors. It serves as a driver stage solution for higher-power amplifier chains. The device is manufactured by Ampleon Netherlands B.V. and is distinct from other variants in the family based on its specific 30 W power rating and associated thermal characteristics.

Replacement Considerations

Direct substitutes are not explicitly listed in the provided documentation. Engineers should evaluate other BLP15 series devices or comparable LDMOS transistors from alternative manufacturers only after verifying pin compatibility, thermal resistance, and RF performance curves.

FAQ

What is the maximum junction temperature for the BLP15H9S30Z?

The maximum junction temperature (Tj) is 225 °C.

Does the BLP15H9S30Z include ESD protection?

Yes, the device features integrated dual-sided ESD protection, rated at C2B (Charged Device Model) and HBM Class 2.

What is the typical power gain at 1400 MHz?

The typical power gain (Gp) is 22 dB when operating at 1400 MHz with a 30 W output power under pulsed RF conditions.