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The Ampleon BLP15M9S100GXY is an N-Channel LDMOS RF MOSFET transistor designed for high-power radio frequency applications. It operates at a maximum frequency of 2 GHz with a drain-source breakdown voltage (Vds) of 50 V and a typical on-resistance (Rds(on)) of 30 mOhms. The device delivers 100 W of output power with a gain of 19 dB. It features a TO-270-2G-1-3 surface-mount package, supports a maximum operating temperature of +225°C, and includes integrated ESD protection. The component is supplied in reel packaging.
Verify the specific suffix 'XY' against official Ampleon documentation to confirm tape-and-reel specifications and handling requirements. Ensure compatibility with standard SMD/SMT assembly processes for the TO-270-2G-1-3 package. Confirm RoHS compliance status through the manufacturer's current datasheet before integration into regulated environments.
Select this component for designs requiring 100 W output at 2 GHz with moderate gain. Compare Rds(on) and Vds ratings against circuit load lines to ensure safe operating area compliance. Consider thermal management solutions suitable for TO-270 packages given the high power density and maximum junction temperature limits specified in the technical data.
This part belongs to the Ampleon BLP15 series of LDMOS transistors, which are engineered for high-efficiency broadband applications ranging from HF to several GHz. The series emphasizes ruggedness and ease of power control for diverse RF amplifier topologies.
Consult official substitution lists for equivalent Ampleon devices such as BLP15H9S100GZ or BLP15M9S100GZ. Verify pinout compatibility and electrical parameter alignment before replacing the original component in existing PCB layouts.