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The BLP15M9S100Z is a general-purpose LDMOS RF power transistor designed for broadcast and ISM applications within the HF to 1500 MHz band. It delivers 100 W output power with a typical gain of 15.7 dB at 1400 MHz. The device features a drain-source breakdown voltage of 65 V, a gate-source threshold voltage of 2.0 V typ, and an on-state resistance of 143 mΩ. Thermal resistance from junction to case is 0.6 K/W. It operates in Class-AB pulsed mode with a maximum junction temperature of 225 °C.
Verify the specific ordering suffix when purchasing. The Z suffix indicates a tape and reel packing format with a minimum orderable quantity of 500 pieces. Confirm that the dry pack specifications match storage requirements. Ensure the procurement channel provides valid Ampleon documentation to guarantee authenticity and correct revision status.
Select this component for designs requiring 100 W output in the HF to 1500 MHz range. Verify thermal management capabilities to maintain junction temperatures below 225 °C. Ensure the bias circuit supports the required quiescent current and gate voltage levels. Check compatibility with the TO-270-2F-1 package footprint and lead coplanarity tolerances during PCB layout.
This part belongs to the BLP series of power LDMOS transistors manufactured by Ampleon. It utilizes the TO-270-2F-1 surface mount package. The device is optimized for linear operation in Class-AB modes, providing a balance between power output and efficiency for broadband RF applications.
BLP15M9S100G is a compatible alternative offering identical electrical characteristics but packaged in cut tape rather than reel.