SEARCH
— IC芯片 | 连接器 | 传感器 | 被动器件 —
The Ampleon BLP15M9S30GXY is an N-channel LDMOS RF MOSFET transistor designed for broadband operation. It delivers a typical output power of 30 W at 2 GHz with a gain of approximately 17 dB. The device features a drain-source voltage rating of 65 V and a maximum junction temperature of +225 °C. Packaged in a TO-270-2F-1 SMD format, it includes integrated dual-sided ESD protection. This component is suitable for applications requiring high efficiency and ruggedness within the HF to 2 GHz frequency range.
Verify the specific ordering suffix against the manufacturer's current datasheet to confirm package type and packing quantity. Ensure compatibility with existing thermal management designs given the TO-270-2F-1 footprint. Confirm RoHS compliance status through official documentation before integration into regulated products.
Select this component for designs requiring 30 W output power in the HF to 2 GHz band. Consider the TO-270-2F-1 package for surface-mount assembly constraints. Evaluate thermal resistance requirements based on the intended duty cycle and ambient operating conditions to ensure junction temperatures remain within safe limits during continuous wave operation.
This part belongs to the BLP15 series of LDMOS transistors from Ampleon. It shares architectural similarities with other models in the family, such as the BLP15H9S30 and BLP15M9S70, but differs in specific power ratings and package variations. The 'G' suffix typically indicates lead-free compliance, while 'XY' denotes reel packaging.
Direct replacements include the BLP15H9S30 or BLP15M9S30. Verify pinout compatibility and thermal characteristics when substituting. Ensure that any alternative component meets the same 30 W power and 2 GHz frequency requirements.