BLP15M9S30XY

Overview

The BLP15M9S30XY is a 30 W LDMOS driver transistor manufactured by Ampleon. It operates in the frequency range from HF to 2 GHz, making it suitable for broadband applications. The device features an N-Channel configuration with a drain-source voltage (Vds) of 50 V and a maximum junction temperature of +225 °C. Typical performance includes a power gain of 28 dB at 325–352 MHz and 22 dB at 1400 MHz under pulsed RF conditions. The component utilizes a TO-270-2F-1 package and is supplied in a reel format.

Feature Summary

• Designed for broadband operation across HF to 2 GHz frequencies
• Integrated dual-sided ESD protection for enhanced reliability
• Excellent ruggedness capable of withstanding high VSWR loads
• High power gain and efficiency for effective signal amplification

Applications

• Broadcast transmitter applications
• Industrial, scientific and medical (ISM) applications
• Digital and analog transmitter drivers

Procurement Notes

Verify the specific ordering suffix against the manufacturer's current product data sheet to confirm packaging details and compliance status. Ensure that the requested variant matches the required thermal and electrical specifications for the intended design. Cross-reference the part number with official distributor catalogs to confirm availability and authenticity before finalizing procurement plans.

Selection Notes

Select this component for designs requiring a robust driver stage operating up to 2 GHz. The high junction temperature rating supports demanding thermal environments. Consider the integrated ESD protection when designing input interfaces. Verify that the system impedance and load conditions align with the device's ruggedness specifications to ensure long-term operational stability.

Part Context

This part belongs to the BLP15 series of LDMOS transistors from Ampleon. These devices are engineered for high reliability in broadcast and industrial sectors. The BLP15M9S30XY specifically serves as a driver stage, offering a balance of power output and gain. It complements higher-power final stage transistors in multi-stage amplifier architectures.

Replacement Considerations

Direct replacements include the BLP15H9S30Z and BLP15H9S30G. Verify pinout compatibility and thermal characteristics when substituting. Ensure that the alternative package type meets the PCB layout requirements of the existing design.