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The BLP15M9S30Z is a general-purpose LDMOS RF power transistor designed for broadcast and ISM applications within the HF to 2 GHz band. It delivers 30 W of output power with high efficiency and excellent ruggedness. The device features integrated dual-sided ESD protection and supports Class-AB operation, capable of withstanding VSWR = 10:1 through all phases. Key electrical parameters include a drain-source voltage of 65 V, a typical power gain of 19.3 dB at 1400 MHz, and a thermal resistance from junction to case of 1.9 K/W. It is housed in a TO-270-2F-1 surface-mount package.
Verify the specific ordering suffix against official Ampleon documentation to ensure correct packaging and handling requirements. Confirm that the component meets RoHS compliance standards as specified in the product details. Ensure proper electrostatic discharge precautions are observed during storage and assembly, adhering to CDM Class 2A and HBM Class 2 ratings defined in the datasheet.
Select this component for designs requiring robust performance in the HF to 2 GHz frequency range. Consider the TO-270-2F-1 package dimensions and thermal management capabilities when designing the PCB layout. Evaluate the required bias conditions and heat sinking solutions to maintain junction temperature within safe operating limits during continuous or pulsed operation.
This part belongs to the BLP15M9S30 series of power LDMOS transistors manufactured by Ampleon. It shares functional similarities with other devices in the family but is distinguished by its specific package configuration and electrical characteristics optimized for general-purpose RF power amplification tasks.
Consult the official Ampleon datasheet for verified substitute part numbers. Cross-reference pin configurations and thermal specifications before replacing existing components in established designs.