BLP15M9S30Z

BLP15M9S30Z

$20.68
  • Description:RF MOSFET LDMOS 32V SOT1482-1
  • Series:-

SKU:d6fc56fe6a4c Category: Brand:

  
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Product Detailed Parameters

  • Description:RF MOSFET LDMOS 32V SOT1482-1
  • Series:-
  • Mfr:Ampleon USA Inc.
  • Package:Tape & Reel (TR),Cut Tape (CT)
  • Technology:LDMOS
  • Frequency:2GHz
  • Gain:19.3dB
  • Voltage - Test:32 V
  • Current Rating (Amps):1.4µA
  • Noise Figure:-
  • Current - Test:200 mA
  • Power - Output:30W
  • Voltage - Rated:65 V
  • Grade:-
  • Qualification:-
  • Mounting Type:Surface Mount
  • Package / Case:SOT-1482-1
  • Supplier Device Package:SOT-1482-1
  • Configuration:N-Channel

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BLP15M9S30Z

Overview

The BLP15M9S30Z is a general-purpose LDMOS RF power transistor designed for broadcast and ISM applications within the HF to 2 GHz band. It delivers 30 W of output power with high efficiency and excellent ruggedness. The device features integrated dual-sided ESD protection and supports Class-AB operation, capable of withstanding VSWR = 10:1 through all phases. Key electrical parameters include a drain-source voltage of 65 V, a typical power gain of 19.3 dB at 1400 MHz, and a thermal resistance from junction to case of 1.9 K/W. It is housed in a TO-270-2F-1 surface-mount package.

Feature Summary

  • High efficiency and high power gain suitable for broadband applications
  • Integrated dual-sided ESD protection for enhanced reliability
  • Excellent ruggedness capable of withstanding severe load mismatches
  • Easy power control characteristics for flexible design integration

Applications

  • Industrial, scientific and medical (ISM) applications
  • Broadcast transmitter applications
  • RF power amplifiers for continuous wave (CW) operations

Procurement Notes

Verify the specific ordering suffix against official Ampleon documentation to ensure correct packaging and handling requirements. Confirm that the component meets RoHS compliance standards as specified in the product details. Ensure proper electrostatic discharge precautions are observed during storage and assembly, adhering to CDM Class 2A and HBM Class 2 ratings defined in the datasheet.

Selection Notes

Select this component for designs requiring robust performance in the HF to 2 GHz frequency range. Consider the TO-270-2F-1 package dimensions and thermal management capabilities when designing the PCB layout. Evaluate the required bias conditions and heat sinking solutions to maintain junction temperature within safe operating limits during continuous or pulsed operation.

Part Context

This part belongs to the BLP15M9S30 series of power LDMOS transistors manufactured by Ampleon. It shares functional similarities with other devices in the family but is distinguished by its specific package configuration and electrical characteristics optimized for general-purpose RF power amplification tasks.

Replacement Considerations

Consult the official Ampleon datasheet for verified substitute part numbers. Cross-reference pin configurations and thermal specifications before replacing existing components in established designs.

BLP15M9S30ZBLP15M9S30Z
$20.68
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