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The Ampleon BLP15M9S70GXY is an N-Channel LDMOS RF power transistor designed for high-efficiency radio frequency applications. It operates up to 2 GHz with a drain-source breakdown voltage of 65 V and a maximum operating temperature of +225°C. The device delivers 70 W output power with 19.3 dB gain at a low on-resistance of 185 mOhms. Gate-source voltage limits are -6 V to +13 V, with a threshold of 2.5 V. Packaged in TO-270-2G-1-3 SMD format, it includes integrated ESD protection and supports reel, cut tape, and MouseReel packaging options.
Verify the specific suffix GXY against the manufacturer datasheet to confirm package type and reel specifications. Ensure compatibility with moisture sensitivity levels and storage conditions prior to assembly. Confirm that the TO-270-2G-1-3 footprint matches the target PCB layout requirements for proper thermal and electrical performance.
Select this component for designs requiring 70 W output at frequencies up to 2 GHz. Consider the 65 V breakdown voltage and 185 mOhm on-resistance for biasing calculations. Evaluate the TO-270-2G-1-3 package for surface mount integration and verify thermal management capabilities to support the +225°C maximum junction temperature rating.
This part belongs to the Ampleon BLP15M9S70 series of LDMOS transistors. It shares core electrical characteristics with variants like BLP15M9S70G but differs in packaging and reel configuration. The series is engineered for robust RF power amplification across broadcast and industrial sectors.
Direct substitutes include BLP15M9S70G and BLP15M9S70. Verify pinout compatibility and thermal resistance values before substitution. Ensure the replacement meets the same 70 W output and 2 GHz frequency requirements.