BLP15M9S70XY

Overview

The Ampleon BLP15M9S70XY is an N-Channel LDMOS RF MOSFET transistor designed for high-efficiency radio frequency power amplification. It operates up to a maximum frequency of 2 GHz and delivers a continuous wave output power of 70 W. The device features a drain-source breakdown voltage (Vds) of 65 V and a typical gain of 19.3 dB at the specified operating point. Key electrical parameters include a gate-source threshold voltage (Vgs th) of 2.5 V, with a gate-source voltage range of -6 V to +13 V. The component is housed in a TO-270-2G-1-3 surface-mount package and supports a maximum operating temperature of +225°C.

Feature Summary

• Integrated dual-sided ESD protection enhances device reliability and robustness against electrostatic discharge events.
• High power gain and drain efficiency minimize power consumption and reduce thermal design complexity.
• Superior ruggedness allows the transistor to withstand high Voltage Standing Wave Ratio (VSWR) loads without failure.

Applications

• Continuous Wave (CW) and modulated RF power amplifiers
• AM/FM/TV broadcast transmitter systems
• Industrial heating equipment
• Medical device applications

Procurement Notes

Verify the specific suffix designation when ordering, as variations such as G or XY may indicate differences in packaging format like reel or cut tape rather than functional changes. Confirm RoHS compliance status through official datasheets. Ensure compatibility with moisture sensitivity levels during storage and handling procedures prior to assembly.

Selection Notes

Select this component for designs requiring 70 W output power within the HF to 2 GHz frequency range. Evaluate thermal management requirements given the 225°C maximum junction temperature capability. Compare against lower power variants like the BLP15M9S30 if reduced output is sufficient. Ensure the circuit can support the 65 V drain voltage rating for stable operation under varying load conditions.

Part Context

This part belongs to the Ampleon BLP15 series of LDMOS transistors, which are engineered for broadband RF applications. The series includes variants with different power outputs, such as the 30 W BLP15M9S30 and higher power models. These devices share common architectural features optimized for efficiency and ruggedness in demanding RF environments.

Replacement Considerations

Direct substitutes within the same family include the BLP15M9S30 for lower power needs. Cross-family replacements require matching Vds, frequency range, and package type. Verify pinout compatibility and thermal characteristics before integrating alternative components into existing designs.