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The Ampleon BLP15M9S70Z is a general-purpose LDMOS RF power transistor designed for broadcast and ISM applications within the HF to 2 GHz band. It delivers a rated output power of 70 W with high efficiency and gain. Key electrical parameters include a drain-source voltage limit of 65 V, a junction temperature rating up to 225 °C, and a thermal resistance from junction to case of 1.0 K/W at Tcase = 85 °C. The device features integrated dual-sided ESD protection and exhibits excellent ruggedness against load mismatches.
Verify the specific ordering suffix Z corresponds to the TR13 packing description with a minimum orderable quantity of 500 pieces in dry pack format. Confirm that the package name matches TO-270-2F-1 as specified in the current product data sheet revision. Ensure compliance with RoHS standards by checking the official Ampleon website for the most recent product details before finalizing procurement orders.
Select this component for designs requiring 70 W output power in the HF to 2 GHz range. Consider the 1.0 K/W thermal resistance when designing heat sinks, noting that continuous use at maximum temperature affects reliability. Verify that the application environment supports the specified VDS and VGS limits. Ensure PCB materials match the test circuit specifications for accurate performance prediction.
The BLP15M9S70Z belongs to the BLP15M9S70 series of power LDMOS transistors manufactured by Ampleon. This series is engineered for robust performance in demanding RF environments. The Z suffix indicates a specific packaging configuration distinct from other variants like the XY version, which utilizes different reel specifications and minimum order quantities.
Consult the official Ampleon documentation for verified substitute part numbers. Cross-reference pin configurations and thermal characteristics carefully. Ensure any replacement maintains compatibility with the HF to 2 GHz frequency band and meets the 70 W power requirement.