BLP25M705Z

BLP25M705Z

$18.71
  • Description:RF FET LDMOS 65V 16DB 12VDFN
  • Series:-

SKU:2256ab1e6213 Category: Brand:

  
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Product Detailed Parameters

  • Description:RF FET LDMOS 65V 16DB 12VDFN
  • Series:-
  • Mfr:Ampleon USA Inc.
  • Package:Cut Tape (CT),Bulk
  • Technology:LDMOS
  • Frequency:2.14GHz
  • Gain:16dB
  • Voltage - Test:28 V
  • Current Rating (Amps):-
  • Noise Figure:-
  • Current - Test:55 mA
  • Power - Output:1W
  • Voltage - Rated:65 V
  • Grade:-
  • Qualification:-
  • Mounting Type:Surface Mount
  • Package / Case:12-VDFN Exposed Pad
  • Supplier Device Package:12-HVSON (6x4)
  • Configuration:-

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BLP25M705Z

Overview

The BLP25M705 is a 5 W LDMOS power transistor designed for broadcast and industrial applications across the HF to 2500 MHz band. It operates with a drain-source voltage of 65 V and features integrated ESD protection, high efficiency, and excellent thermal stability. The device utilizes an HVSON12 (SOT1179-2) package with dimensions of 6 x 4 x 0.85 mm. At 2450 MHz with a 28 V supply, it delivers 5 W output power with a typical gain of 16.4 dB in continuous wave mode.

Feature Summary

  • Broadband operation capability from HF frequencies up to 2500 MHz
  • Integrated electrostatic discharge (ESD) protection circuitry
  • High ruggedness capable of withstanding significant load mismatches
  • Excellent thermal stability ensuring reliable performance under stress

Applications

  • Industrial, scientific and medical (ISM) equipment
  • Broadcast transmitter driver stages
  • Broadband RF amplification systems

Procurement Notes

Verify component authenticity through authorized Ampleon distribution channels. Confirm that the received units match the SOT1179-2 package specification and exhibit no physical damage to the thermal-enhanced leads. Ensure proper ESD handling protocols are followed during inspection and storage to maintain device integrity prior to assembly.

Selection Notes

Select this component for designs requiring a compact, broadband LDMOS solution operating up to 2500 MHz. The device is suitable for Class-AB linear amplifier applications where high power gain and thermal stability are critical. Ensure the design accommodates the 65 V maximum drain-source voltage and provides adequate heat sinking for the specified junction-to-case thermal resistance.

Part Context

This part belongs to the Ampleon LDMOS power transistor family, specifically engineered for driver stages in RF power amplifiers. It serves as a bridge between low-power control signals and higher-power output stages in broadcast and industrial transmission systems. The technology leverages lateral diffusion metal-oxide semiconductor architecture for robust performance.

Replacement Considerations

Consult official Ampleon documentation for qualified substitute part numbers. Verify pinout compatibility and electrical specifications before substituting any alternative components in existing designs.

BLP25M705ZBLP25M705Z
$18.71
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