BLP25M710Z

BLP25M710Z

$23.76
  • Description:RF MOSFET LDMOS 28V 12HVSON
  • Series:-

SKU:fe32094ca8fc Category: Brand:

  
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Product Detailed Parameters

  • Description:RF MOSFET LDMOS 28V 12HVSON
  • Series:-
  • Mfr:Ampleon USA Inc.
  • Package:Tape & Reel (TR),Cut Tape (CT)
  • Technology:LDMOS
  • Frequency:2.14GHz
  • Gain:16dB
  • Voltage - Test:28 V
  • Current Rating (Amps):-
  • Noise Figure:-
  • Current - Test:110 mA
  • Power - Output:2W
  • Voltage - Rated:65 V
  • Grade:-
  • Qualification:-
  • Mounting Type:Surface Mount
  • Package / Case:12-VDFN Exposed Pad
  • Supplier Device Package:12-HVSON (6x4)
  • Configuration:Dual, Common Source

Download product information

BLP25M710Z

Overview

The BLP25M710 is a 10 W LDMOS power transistor designed for broadcast and industrial applications in the HF to 2500 MHz band. It operates with a drain-source voltage of 28 V and a quiescent current of 110 mA, delivering 16 dB gain at 2 W average output power. The device features a maximum drain-source breakdown voltage of 65 V and a junction temperature limit of 150 °C. Packaged in a 12-terminal HVSON (SOT1179-2) with a body size of 6 x 4 mm, it includes integrated ESD protection and exhibits excellent thermal stability.

Feature Summary

  • Broadband operation capability across the HF to 2500 MHz frequency range
  • Integrated electrostatic discharge (ESD) protection circuitry
  • High ruggedness capable of withstanding VSWR = 10:1 through all phases
  • Excellent thermal stability and high efficiency performance

Applications

  • Industrial, scientific and medical (ISM) applications
  • Broadcast transmitter driver stages

Procurement Notes

Verify the component against the official Ampleon data sheet Rev. 2 dated 1 September 2015. Confirm the package designation SOT1179-2 matches the required 12-HVSON form factor. Ensure handling procedures comply with ESD sensitivity standards such as ANSI/ESD S20.20 or IEC/ST 61340-5 during installation.

Selection Notes

Select this device for designs requiring broadband amplification up to 2500 MHz with 10 W pulsed output power. Verify that the application environment maintains case temperatures within the recommended operating area defined in the datasheet. Ensure input return loss requirements align with the specified -16 dB typical value at 2 W average power.

Part Context

This component belongs to the BLP25 series of LDMOS power transistors manufactured by Ampleon USA Inc. The series targets RF power amplifier applications where broadband coverage and high linearity are critical. The BLP25M710 specifically serves as a driver stage solution for systems operating in the HF spectrum through UHF bands.

Replacement Considerations

No public confirmed substitute part numbers are documented in the provided source material.

BLP25M710ZBLP25M710Z
$23.76
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