BLP27M810Z

BLP27M810Z

$17.88
  • Description:RF MOSFET LDMOS 28V 16HVSON
  • Series:-

SKU:e86d03bb6472 Category: Brand:

  
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Product Detailed Parameters

  • Description:RF MOSFET LDMOS 28V 16HVSON
  • Series:-
  • Mfr:Ampleon USA Inc.
  • Package:Tape & Reel (TR),Tape & Reel (TR),Cut Tape (CT)
  • Technology:LDMOS
  • Frequency:2.14GHz
  • Gain:17dB
  • Voltage - Test:28 V
  • Current Rating (Amps):-
  • Noise Figure:-
  • Current - Test:110 mA
  • Power - Output:2W
  • Voltage - Rated:65 V
  • Grade:-
  • Qualification:-
  • Mounting Type:Surface Mount
  • Package / Case:16-VDFN Exposed Pad
  • Supplier Device Package:16-HVSON (6x4)
  • Configuration:Dual, Common Source

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BLP27M810Z

Overview

The BLP27M810 is a 10 W LDMOS power transistor designed for broadcast and Industrial, Scientific and Medical (ISM) applications across frequencies from HF to 2700 MHz. It operates with a drain-source voltage of 65 V and features an integrated ESD protection circuit. The device utilizes an HVSON16 package (SOT1371-1), measuring 4 x 6 x 0.85 mm. Typical performance at VDS = 32 V and IDq = 100 mA includes a power gain of 18.4 dB and a drain efficiency of 50.6% at 2450 MHz. The junction temperature limit is 225 °C, and the thermal resistance from junction to case is 3.2 K/W.

Feature Summary

  • High efficiency and high power gain capabilities
  • Excellent ruggedness and thermal stability
  • Integrated ElectroStatic Discharge (ESD) protection
  • Broadband operation spanning from HF to 2700 MHz

Applications

  • Broadcast systems operating within the HF to 2700 MHz range
  • Industrial, Scientific and Medical (ISM) equipment
  • High power Continuous Wave (CW) driver stages

Procurement Notes

Verify component authenticity through authorized Ampleon distribution channels or verified partners like Flip Electronics. Confirm RoHS compliance status and check for moisture sensitivity handling requirements prior to assembly. Ensure ordering suffixes match specific packaging configurations if applicable.

Selection Notes

Select this component for single-ended Class-AB amplifier designs requiring broadband coverage up to 2700 MHz. Evaluate thermal management strategies given the 3.2 K/W junction-to-case resistance. Verify impedance matching networks against typical load-pull data provided in the datasheet for optimal power transfer.

Part Context

This part belongs to the Ampleon BLP series of LDMOS power transistors. These devices are engineered for high-performance RF amplification in demanding environments. The BLP27M810 specifically targets applications needing robust output power over a wide frequency spectrum without sacrificing efficiency.

Replacement Considerations

No direct public substitute part numbers are documented in the source material. Cross-referencing requires matching electrical parameters such as 10 W output power, 65 V breakdown voltage, and SOT1371-1 package dimensions.

FAQ

What is the maximum junction temperature for the BLP27M810?

The maximum junction temperature (Tj) is 225 °C.

Is the BLP27M810 suitable for automotive applications?

No, unless expressly stated otherwise, Ampleon products are not qualified or tested for automotive use and should not be used in automotive equipment.

What package type does the BLP27M810 use?

It uses the HVSON16 plastic thermal enhanced very thin small outline package, designated as SOT1371-1.

BLP27M810ZBLP27M810Z
$17.88
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