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The BLP27M810 is a 10 W LDMOS power transistor designed for broadcast and Industrial, Scientific and Medical (ISM) applications across frequencies from HF to 2700 MHz. It operates with a drain-source voltage of 65 V and features an integrated ESD protection circuit. The device utilizes an HVSON16 package (SOT1371-1), measuring 4 x 6 x 0.85 mm. Typical performance at VDS = 32 V and IDq = 100 mA includes a power gain of 18.4 dB and a drain efficiency of 50.6% at 2450 MHz. The junction temperature limit is 225 °C, and the thermal resistance from junction to case is 3.2 K/W.
Verify component authenticity through authorized Ampleon distribution channels or verified partners like Flip Electronics. Confirm RoHS compliance status and check for moisture sensitivity handling requirements prior to assembly. Ensure ordering suffixes match specific packaging configurations if applicable.
Select this component for single-ended Class-AB amplifier designs requiring broadband coverage up to 2700 MHz. Evaluate thermal management strategies given the 3.2 K/W junction-to-case resistance. Verify impedance matching networks against typical load-pull data provided in the datasheet for optimal power transfer.
This part belongs to the Ampleon BLP series of LDMOS power transistors. These devices are engineered for high-performance RF amplification in demanding environments. The BLP27M810 specifically targets applications needing robust output power over a wide frequency spectrum without sacrificing efficiency.
No direct public substitute part numbers are documented in the source material. Cross-referencing requires matching electrical parameters such as 10 W output power, 65 V breakdown voltage, and SOT1371-1 package dimensions.
The maximum junction temperature (Tj) is 225 °C.
No, unless expressly stated otherwise, Ampleon products are not qualified or tested for automotive use and should not be used in automotive equipment.
It uses the HVSON16 plastic thermal enhanced very thin small outline package, designated as SOT1371-1.