BLP7G07S-140P,118

Overview

The BLP7G07S-140P is a 140 W LDMOS power transistor designed for base station applications operating from 700 MHz to 1000 MHz. It features integrated ESD protection, excellent ruggedness, high efficiency, and thermal stability. The device is internally matched for ease of use and complies with RoHS directives. Typical performance under 2-carrier W-CDMA conditions at VDS = 28V includes a drain efficiency of 29.6% and a power gain of 20.9 dB.

Feature Summary

• Integrated electrostatic discharge (ESD) protection
• Excellent ruggedness capable of withstanding high voltage standing-wave ratios
• High efficiency and excellent thermal stability
• Internally matched for simplified circuit design

Applications

• RF power amplifiers for W-CDMA base stations
• Multi-carrier applications in the 700 MHz to 1000 MHz frequency range

Procurement Notes

Verify the component against the official Ampleon datasheet Rev. 5 dated January 8, 2016. Confirm the package type is HSOP4F (SOT1223-2). Ensure the ordering suffix matches the specific variant required. Check for compliance with Directive 2002/95/EC regarding hazardous substances. Validate that the device meets the absolute maximum ratings specified in the product data sheet before integration.

Selection Notes

Select this component for broadband RF power amplifier designs requiring operation between 700 MHz and 1000 MHz. The internal matching network simplifies impedance matching requirements. Consider the thermal resistance characteristics when designing heat dissipation solutions. Verify compatibility with Class-AB operation parameters and ensure the application environment supports the specified junction temperature limits.

Part Context

This part is a Power LDMOS transistor manufactured by Ampleon Netherlands B.V., formerly associated with NXP Semiconductors. It belongs to a series of power transistors optimized for telecommunications infrastructure. The device utilizes a plastic heatsink small outline package with four flat leads. It is distinct from other variants by its specific pinning and electrical characteristics defined in the product data sheet.

Replacement Considerations

Consult the manufacturer's documentation for direct substitutes. Cross-reference specifications such as output power, frequency range, and package dimensions. Verify that any alternative component meets the same ruggedness and thermal stability requirements for base station applications.

FAQ

What is the maximum drain-source voltage rating?

The maximum drain-source voltage (VDS) is rated at 65 V.

Does the device support load mismatch conditions?

Yes, it can withstand a load mismatch corresponding to a VSWR of 10:1 through all phases in Class-AB operation.

What is the typical drain efficiency at 35 W output power?

The typical drain efficiency is 29.6% when delivering 35 W of average power under 2-carrier W-CDMA test conditions.