BLP7G22-05Z

Overview

The BLP7G22-05 is a 5 W plastic LDMOS power transistor designed for base station applications operating from 700 MHz to 2700 MHz. It features high efficiency, excellent ruggedness, and broadband operation capabilities. The device includes integrated ESD protection and complies with RoHS directives. Typical RF performance at VDS = 28 V and IDq = 55 mA includes a power gain of 16 dB and drain efficiency of 23% at 1 W output power (pulsed CW). In IS-95 mode, it delivers 1 W output with 23.9 dB gain and 25% efficiency. For 2-carrier W-CDMA, it provides 1 W output with 16.7 dB gain and 27% efficiency.

Feature Summary

• High efficiency and high power gain for broadband operations
• Excellent thermal stability and ruggedness under load mismatch conditions
• Integrated electrostatic discharge (ESD) protection

Applications

• CDMA
• W-CDMA
• GSM EDGE
• MC-GSM
• LTE
• WiMAX

Procurement Notes

Verify the component against the official Ampleon datasheet specifications before integration. Confirm that the package type matches the SOT1179-2 HVSON12 outline dimensions. Ensure handling procedures adhere to ESD safety standards as the device is sensitive to electrostatic discharge. Check for RoHS compliance documentation if required by specific regulatory frameworks.

Selection Notes

Select this component for base station driver stages requiring 5 W output power across wide frequency bands. Ensure the application circuit supports the recommended VDS of 28 V and appropriate quiescent current settings. Verify thermal management capabilities to maintain junction temperature within the 150 °C limit. Consider the device's Class-AB operation characteristics for optimal linearity and efficiency balance in multi-carrier environments.

Part Context

This LDMOS transistor serves as a driver stage in cellular infrastructure equipment. It bridges low-power control signals to higher-power amplifier stages. The device is part of Ampleon's portfolio focused on mobile communication base stations. Its design emphasizes reliability and thermal performance in continuous wave and modulated signal applications.

Replacement Considerations

Consult Ampleon technical support for direct replacements. Evaluate alternative LDMOS devices with similar power ratings and frequency ranges. Verify pin compatibility and thermal resistance values when substituting components in existing designs.

FAQ

What is the maximum drain-source voltage rating?

The absolute maximum drain-source voltage (VDS) is rated at 65 V.

How does the device handle load mismatches?

The BLP7G22-05 can withstand a load mismatch corresponding to a VSWR of 10:1 through all phases under specified operating conditions.

What is the thermal resistance from junction to case?

The typical thermal resistance from junction to case (Rth(j-c)) is 6.4 K/W when measured under RF conditions at a case temperature of 80 °C and 5 W power dissipation.