BLP7G22-10,135

BLP7G22-10,135

  • Description:RF MOSFET LDMOS 28V 12HVSON
  • Series:-

SKU:a4adb0072a3a Category: Brand:

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Product Detailed Parameters

  • Description:RF MOSFET LDMOS 28V 12HVSON
  • Series:-
  • Mfr:NXP USA Inc.
  • Package:Tape & Reel (TR)
  • Technology:LDMOS
  • Frequency:700MHz ~ 2.2GHz
  • Gain:27dB
  • Voltage - Test:28 V
  • Current Rating (Amps):-
  • Noise Figure:-
  • Current - Test:110 mA
  • Power - Output:2W
  • Voltage - Rated:65 V
  • Grade:-
  • Qualification:-
  • Mounting Type:Surface Mount
  • Package / Case:12-VDFN Exposed Pad
  • Supplier Device Package:12-HVSON (4x6)
  • Configuration:-

Download product information

BLP7G22-10,135

Overview

The BLP7G22-10 is a 10W plastic LDMOS power transistor designed for base station applications across frequencies from 700 MHz to 2700 MHz. It operates at VDS = 28 V and IDq = 110 mA, delivering high efficiency and excellent ruggedness. The device features integrated ESD protection and RoHS compliance. Key electrical parameters include a drain-source voltage of 65 V, junction temperature up to 150 °C, and thermal resistance (Rth j-c) of 3.2 K/W. It provides approximately 14.5 dB gain and 26% drain efficiency in pulsed CW mode at 2700 MHz.

Feature Summary

  • High efficiency and high power gain
  • Excellent ruggedness with load mismatch tolerance
  • Designed for broadband operation
  • Integrated ESD protection

Applications

  • CDMA
  • W-CDMA
  • GSM EDGE
  • MC-GSM
  • LTE
  • WiMAX

Procurement Notes

Verify the manufacturer origin, as Ampleon products may carry NXP branding references in older documentation. Confirm the package version matches SOT1179-2 (HVSON12). Ensure the component meets Directive 2002/95/EC RoHS requirements. Check that the ordering suffix corresponds to the correct tape and reel configuration if applicable.

Selection Notes

Select this component for single-ended driver applications requiring robust performance in multi-carrier environments. Verify compatibility with Rogers RO4350 PCB materials for optimal RF performance. Ensure the operating case temperature remains within recommended limits to maintain stability and prevent exceeding absolute maximum ratings.

Part Context

This LDMOS driver transistor belongs to the BLP7G series, optimized for cellular infrastructure. It utilizes TrenchMOS technology for enhanced thermal management. The HVSON12 package facilitates efficient heat dissipation through an exposed die-pad source connection, suitable for compact base station designs.

Replacement Considerations

Consult official Ampleon documentation for direct substitutes. No specific replacement part numbers are confirmed in the provided datasheet.

FAQ

What is the maximum load mismatch the device can withstand?

The BLP7G22-10 can withstand a load mismatch corresponding to VSWR = 10:1 through all phases under specified operating conditions.

Is this device suitable for automotive applications?

No, unless expressly stated otherwise, non-automotive qualified products are not suitable for automotive use or testing requirements.

What is the recommended PCB material for RF performance?

The application circuit specifies Rogers RO4350 with a thickness of 0.762 mm and a relative permittivity (εr) of 3.5.

BLP7G22-10,135BLP7G22-10,135

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