BLP8G05S-200GY

Overview

The BLP8G05S-200GY is a 200 W LDMOS power transistor designed for base station applications in the 400 MHz to 500 MHz frequency range. It operates with a drain-source voltage of 65 V and delivers an average output power of 210 W at 440 MHz, achieving a typical drain efficiency of 77% and a power gain of 21 dB. The device features a junction-to-case thermal resistance of 0.5 K/W and supports a maximum junction temperature of 225 °C. It is housed in an HSOP4 plastic heatsink small outline package (SOT1204-2) and includes integrated ESD protection.

Feature Summary

• Designed specifically for Industrial, Scientific and Medical (ISM) operations within the 400 MHz to 500 MHz band.
• Features excellent ruggedness capable of withstanding a load mismatch corresponding to VSWR = 10:1 through all phases.
• Includes integrated ElectroStatic Discharge (ESD) protection to enhance reliability during handling and operation.
• Optimized for easy power control and simple board design through input integration.

Applications

• RF power amplifiers for W-CDMA base stations
• Multi-carrier applications in the 400 MHz to 500 MHz frequency range
• Industrial, Scientific and Medical (ISM) equipment

Procurement Notes

Verify the specific ordering suffix against the manufacturer's current documentation to confirm the exact package variant, as the 'G' suffix denotes the SOT1204-2 package. Ensure compliance with RoHS Directive 2002/95/EC requirements if applicable to your manufacturing process. Confirm that the component status remains active before initiating production designs.

Selection Notes

Select this component for high-efficiency RF power amplification in the sub-500 MHz spectrum. The device requires a case temperature management system to maintain performance, given its 0.5 K/W thermal resistance. Ensure the application circuit provides adequate impedance matching at 440 MHz to achieve the specified 21 dB gain and 77% efficiency without exceeding the 65 V drain-source voltage limit.

Part Context

This part belongs to Ampleon's portfolio of LDMOS power transistors engineered for telecommunications infrastructure. It serves as a core active element in linear RF power amplifier stages, replacing older technologies to improve energy efficiency and signal fidelity in cellular network base stations operating in lower frequency bands.

Replacement Considerations

The datasheet lists BLP8G05S-200 as the non-G counterpart, which utilizes the SOT1138-2 package. Verify pinout compatibility and mechanical dimensions when substituting between these variants. No other direct substitutes are documented in the provided source material.