BLP8G05S-200Y

Overview

The Ampleon BLP8G05S-200Y is a 200 W LDMOS power transistor designed for base station applications in the 400 MHz to 500 MHz frequency range. It features high efficiency, excellent ruggedness, and thermal stability. At 440 MHz with VDS = 28 V and IDq = 2 mA, it delivers 210 W output power with 21 dB gain and 77% drain efficiency. The device includes integrated ESD protection and RoHS compliance.

Feature Summary

• High efficiency and excellent thermal stability
• Excellent ruggedness withstanding VSWR = 10:1 mismatch
• Integrated ESD protection for enhanced reliability
• Designed for ISM operation and simple board design

Applications

• RF power amplifiers for W-CDMA base stations
• Multi-carrier applications in the 400 MHz to 500 MHz range
• ISM band operations

Procurement Notes

Verify the specific ordering suffix against official documentation to confirm package type and compliance status. Confirm that the component matches the required application specifications before procurement. Ensure proper handling precautions are observed due to electrostatic sensitivity.

Selection Notes

Select this component for high-power RF amplifier designs operating between 400 MHz and 500 MHz. Consider the SOT1138-2 or SOT1204-2 package variants based on thermal management requirements. Evaluate the 65 V drain-source voltage limit and 225 °C junction temperature capability for system robustness.

Part Context

This part belongs to the Ampleon BLP8G05S series of LDMOS power transistors. It is specifically engineered for wireless infrastructure and industrial applications requiring high linearity and power density in the sub-GHz spectrum.

Replacement Considerations

BLP8G05S-200G serves as a direct replacement variant within the same product family, differing primarily in package configuration.