BLP8G10S-270PWY

Overview

The BLP8G10S-270PW is a 270 W LDMOS packaged symmetric Doherty power transistor designed for base station applications in the 700 MHz to 900 MHz frequency range. It operates at VDS = 28 V with a drain-source breakdown voltage of 65 V. The device delivers an output power of 315 W to 365 W at 3 dB gain compression and achieves a typical power gain of 19 dB to 20 dB. Drain efficiency reaches up to 46% under 1-carrier W-CDMA conditions and exceeds 60% in pulsed CW operation. The component utilizes an HSOP6F (SOT1221-2) package.

Feature Summary

• Designed specifically for symmetric Doherty amplifier configurations
• Internally matched for simplified circuit integration
• Integrated electrostatic discharge protection
• Low thermal resistance ensuring operational stability

Applications

• RF power amplifiers for base stations
• Multi-carrier applications in the 700 MHz to 900 MHz range
• Doherty power amplifier architectures

Procurement Notes

Verify the specific ordering suffix against official Ampleon documentation to ensure correct package version and manufacturing lot specifications. Confirm RoHS compliance status via current datasheets before procurement. Ensure handling procedures adhere to ESD sensitivity standards during storage and assembly.

Selection Notes

Select this component for high-efficiency Doherty PA designs operating between 700 MHz and 900 MHz. Evaluate thermal management requirements based on the junction-to-case thermal resistance values provided in the datasheet. Verify impedance matching networks against the load-pull data for optimal power and efficiency performance.

Part Context

This part belongs to the BLP8 series of LDMOS transistors from Ampleon, targeting cellular infrastructure. It complements other wideband and narrowband RF power devices within the manufacturer's portfolio for 3GPP compliant base station deployments.

Replacement Considerations

Consult official Ampleon substitution guides for verified equivalents. Cross-referencing requires matching package type, pinout configuration, and electrical characteristics such as breakdown voltage and thermal resistance.