BLP8G10S-45PY

Overview

The BLP8G10S-45P is a dual-path, 45 W LDMOS power transistor designed for base station applications operating between 700 MHz and 1000 MHz. It utilizes a plastic heatsink small outline package (SOT1223-4) with five leads. Key electrical parameters include a drain-source voltage of 65 V, a junction temperature limit of 225 °C, and a thermal resistance from junction to case of 0.85 K/W at Tcase = 85 °C and PL = 5 W. In a class-AB production circuit at VDS = 28 V, IDq = 224 mA, and Tcase = 25 °C, the device delivers a typical power gain of 20.8 dB, drain efficiency of 19.8%, and an adjacent channel power ratio of -49 dBc under 2-carrier W-CDMA test conditions.

Feature Summary

• High efficiency and high power gain characteristics
• Excellent ruggedness capable of withstanding VSWR = 10:1 through all phases
• Broadband operation capability from 700 MHz to 1000 MHz
• Integrated ESD protection compliant with CDM Class C2A and HBM Class 1C

Applications

• W-CDMA base stations
• LTE base stations
• GSM base stations

Procurement Notes

Verify the specific package variant required, as the BLP8G10S-45P corresponds to the SOT1223-4 outline, while the BLP8G10S-45PG uses the SOT1224-4 outline. Confirm RoHS compliance status via official Ampleon resources. Ensure handling procedures adhere to ESD sensitivity standards due to the component's classification. Validate that the application environment remains within the specified absolute maximum ratings to maintain reliability.

Selection Notes

Select this component for broadband base station amplifiers requiring dual-path configuration. The device supports class-AB operation with specific impedance matching requirements detailed in the datasheet. Designers must account for the thermal resistance of 0.85 K/W when calculating heat dissipation. Verify that the input and load impedances align with the provided typical impedance data for the target frequency range to achieve optimal performance metrics.

Part Context

This part belongs to the BLP8 series of power LDMOS transistors manufactured by Ampleon USA Inc. The BLP8G10S-45P is specifically distinguished by its SOT1223-4 package, differing from the BLP8G10S-45PG which utilizes the SOT1224-4 package. Both variants share identical electrical specifications and are intended for similar wireless communication infrastructure applications.

Replacement Considerations

The BLP8G10S-45PG serves as a functional equivalent with identical electrical characteristics but utilizes the SOT1224-4 package instead of the SOT1223-4. Substitution requires verification of mechanical fit and lead coplanarity tolerances. No other direct substitutes are documented in the provided source material.