BLP8G27-10Z

Overview

The BLP8G27-10 is a 10 W plastic LDMOS power transistor designed for base station applications across frequencies from 700 MHz to 2700 MHz. It operates with a drain-source voltage of 65 V and features integrated ESD protection. The device utilizes an HVSON16 package (SOT1371-1) with dimensions of 4 x 6 x 0.85 mm. Typical RF performance at Tcase = 25 °C, IDq = 110 mA, and VDS = 28 V includes a power gain of 17 dB and drain efficiency of 19% at 2 W output power. In pulsed CW operation at 2140 MHz, it achieves a 1 dB gain compression point of 10 W.

Feature Summary

• High efficiency and excellent ruggedness suitable for broadband operation
• Excellent thermal stability and high power gain characteristics
• Integrated electrostatic discharge (ESD) protection

Applications

• CDMA systems
• W-CDMA systems
• GSM EDGE networks
• MC-GSM infrastructure
• LTE deployments
• WiMAX applications

Procurement Notes

Verify the specific ordering suffix against official Ampleon documentation to confirm exact packaging and reel specifications. Confirm RoHS compliance status as stated in the product data sheet prior to procurement. Ensure handling procedures adhere to ESD safety standards due to the sensitivity of the component.

Selection Notes

Select this component for single-ended base station applications requiring broadband coverage between 700 MHz and 2700 MHz. Evaluate thermal resistance requirements based on the junction-to-case value of 3.2 K/W. Ensure the application circuit supports Class-AB operation with appropriate biasing conditions for optimal linearity and efficiency.

Part Context

This part belongs to the Ampleon LDMOS power transistor portfolio, specifically engineered for wireless communication infrastructure. It represents a solution for multi-standard base stations requiring robust performance across diverse frequency bands without compromising efficiency or thermal management.

Replacement Considerations

Consult official Ampleon substitution guides for verified alternatives. Do not assume functional equivalence with other LDMOS transistors without verifying pinout compatibility, electrical parameters, and package dimensions.

FAQ

What is the maximum load mismatch the BLP8G27-10 can withstand?

The device can withstand a load mismatch corresponding to a VSWR of 10:1 through all phases under specified operating conditions.

Is the BLP8G27-10 suitable for automotive applications?

No, unless explicitly stated otherwise, this product is not automotive qualified and is not suitable for automotive use.

What type of package does the BLP8G27-10 utilize?

It uses an HVSON16 plastic thermal enhanced very thin small outline package (SOT1371-1) with no leads.