BLP8G27-5Z

BLP8G27-5Z

$9.71
  • Description:RF MOSFET LDMOS 28V 16HVSON
  • Series:-

SKU:e073cbc69a12 Category: Brand:

  
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Product Detailed Parameters

  • Description:RF MOSFET LDMOS 28V 16HVSON
  • Series:-
  • Mfr:Ampleon USA Inc.
  • Package:Tape & Reel (TR),Cut Tape (CT)
  • Technology:LDMOS
  • Frequency:2.14GHz
  • Gain:18dB
  • Voltage - Test:28 V
  • Current Rating (Amps):-
  • Noise Figure:-
  • Current - Test:55 mA
  • Power - Output:750mW
  • Voltage - Rated:65 V
  • Grade:-
  • Qualification:-
  • Mounting Type:Surface Mount
  • Package / Case:16-VDFN Exposed Pad
  • Supplier Device Package:16-HVSON (6x4)
  • Configuration:-

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BLP8G27-5Z

Overview

The BLP8G27-5 is a 5 W plastic LDMOS power transistor designed for base station applications operating from 700 MHz to 2700 MHz. It features a drain-source voltage of 65 V and a junction temperature rating up to 225 °C. The device delivers a typical power gain of 18 dB and a drain efficiency of 17% at 2140 MHz under pulsed CW conditions. It operates with a gate-source threshold voltage of 1.9 V typ and includes integrated ESD protection. Packaged in an HVSON16 (SOT1371-1) thermal enhanced very thin small outline package, it supports single-ended configurations.

Feature Summary

  • High efficiency and high power gain for broadband operation
  • Excellent ruggedness capable of withstanding VSWR = 10:1 through all phases
  • Integrated ESD protection compliant with RoHS Directive 2002/95/EC

Applications

  • CDMA base stations
  • W-CDMA infrastructure
  • GSM EDGE networks
  • LTE systems
  • WiMAX deployments

Procurement Notes

Verify the specific ordering suffix against official Ampleon documentation before purchase. Confirm that the component matches the required SOT1371-1 package variant. Ensure compliance with local import regulations and export control requirements applicable to RF semiconductor devices. Request the latest product data sheet revision to confirm current manufacturing status and any potential specification updates prior to finalizing procurement orders.

Selection Notes

Select this component for single-ended Class-AB amplifier designs requiring robust performance across wide frequency bands. Verify thermal management capabilities to maintain junction temperatures within the 225 °C limit during continuous operation. Ensure the application circuit utilizes appropriate impedance matching networks compatible with the specified 28 V supply voltage and 55 mA quiescent current parameters for optimal linearity and efficiency.

Part Context

This part belongs to the Ampleon BLP series of plastic LDMOS power transistors engineered specifically for wireless communication infrastructure. The series provides solutions for multi-standard base station amplifiers covering various cellular generations. The BLP8G27-5 specifically targets broadband requirements, allowing designers to use a single component across multiple frequency bands without redesigning the core amplifier stage.

Replacement Considerations

Consult official Ampleon substitution guides for verified equivalents. Cross-reference pinouts and thermal characteristics carefully when considering alternative manufacturers' components.

BLP8G27-5ZBLP8G27-5Z
$9.71
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