BLP9H10S-350AY

Overview

The BLP9H10S-350A is a dual N-channel LDMOS power transistor designed for asymmetric Doherty base station applications in the 600 MHz to 960 MHz range. It delivers 350 W output power with 18.6 dB gain and 52% drain efficiency at VDS = 48 V. The device features low thermal resistance (0.6 K/W) and operates within a case temperature of -40 °C to +125 °C. Packaged in the OMP-780-4F-1 overmolded plastic earless flanged format, it integrates wideband input matching and double-sided ESD protection.

Feature Summary

• Optimized for asymmetric Doherty architectures with reduced output capacitance
• Low memory effects supporting digital pre-distortion
• Integrated wideband input matching network
• Dual-sided electrostatic discharge protection

Applications

• RF power amplifiers for base stations
• Multi-carrier applications in the 600 MHz to 960 MHz frequency range

Procurement Notes

Verify the specific ordering suffix against the manufacturer's current catalog to confirm packaging configuration. Confirm RoHS compliance status directly through official product detail pages before finalizing procurement specifications.

Selection Notes

Select this component for high-power Doherty PA designs requiring robust ruggedness under load mismatch conditions. Ensure the application circuit maintains the specified VDS of 48 V and utilizes appropriate thermal management to sustain junction temperatures below 200 °C.

Part Context

This part belongs to Ampleon’s Macro line-up of multi-band high-power driver and final power amplifiers. It supports mobile standards including LTE and 5G by providing reliable RF performance in demanding wireless communication environments.

Replacement Considerations

Publicly confirmed substitute part numbers are not available in the provided documentation.