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The BLP9H10S-850AVTY is an LDMOS asymmetric Doherty power transistor designed for base station applications in the 617 MHz to 960 MHz frequency range. It features a dual N-channel architecture with a drain-source breakdown voltage of 108 V and a maximum drain-source voltage of 105 V. The device operates within a case temperature range of -40 °C to +125 °C and utilizes an OMP-1230-6F-1 overmolded plastic earless flanged package. Typical performance at 942 MHz includes a gain of 17.5 dB, drain efficiency of 51.7%, and output power of 50.8 dBm under 1-carrier W-CDMA testing.
Verify the specific ordering suffix against official Ampleon documentation to confirm packaging variations such as tray or reel configurations. Ensure that any requested substitutions maintain identical electrical specifications and pinout compatibility. Confirm RoHS compliance status directly through manufacturer channels prior to finalizing procurement orders.
Select this component for designs requiring robust ruggedness and high efficiency in asymmetric Doherty architectures. Verify that the application supports the specified gate-source voltage limits and thermal management requirements. Ensure impedance matching networks align with the provided load-pull data for optimal power gain and drain efficiency across the target frequency band.
This part belongs to the BLP9H10S series of power LDMOS transistors manufactured by Ampleon. The series targets UHF frequency bands for wireless communication infrastructure. The 'AVT' designation indicates the specific package version and internal configuration, while the 'Y' suffix typically denotes a specific tape and reel packaging format for automated assembly.
Consult official Ampleon documentation for confirmed substitute part numbers. Do not assume cross-compatibility with other series without verifying absolute maximum ratings and pin definitions.