BLP9LA25SGXY

BLP9LA25SGXY

$11.89
  • Description:RF MOSFET LDMOS 13.6V TO270
  • Series:-

SKU:6c595701fa08 Category: Brand:

  
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Product Detailed Parameters

  • Description:RF MOSFET LDMOS 13.6V TO270
  • Series:-
  • Mfr:Ampleon USA Inc.
  • Package:Tape & Reel (TR)
  • Technology:LDMOS
  • Frequency:941MHz
  • Gain:18.4dB
  • Voltage - Test:13.6 V
  • Current Rating (Amps):1.4µA
  • Noise Figure:-
  • Current - Test:500 mA
  • Power - Output:25W
  • Voltage - Rated:40 V
  • Grade:-
  • Qualification:-
  • Mounting Type:Surface Mount
  • Package / Case:TO-270BA
  • Supplier Device Package:TO-270-2G-1
  • Configuration:N-Channel

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BLP9LA25SGXY

Overview

The Ampleon BLP9LA25SGXY is an N-Channel LDMOS RF power transistor designed for high-efficiency performance in radio frequency applications. Operating within a frequency range of 0.01 to 0.941 GHz, this component delivers a typical output power of 25 W with a gain of approximately 18.4 dB to 18.8 dB. It functions optimally at a test voltage of 13.6 V and is housed in a TO-270BA (SOT1483-1) surface-mount package. The device is supplied in tape and reel format, ensuring compatibility with automated assembly processes for industrial and broadcast manufacturing.

Feature Summary

  • High efficiency LDMOS technology for robust RF power amplification
  • Capable of handling significant output power within the VHF/UHF spectrum
  • Surface-mount TO-270BA package design for reliable integration

Applications

  • VHF/UHF radio frequency power amplifiers
  • Broadcast transmitter systems
  • Industrial heating and plasma generation equipment

Procurement Notes

Verify the specific ordering suffix against the manufacturer's official datasheet to ensure correct packaging and variant selection. Confirm that the TO-270BA footprint matches your PCB layout requirements. Check for any recent updates to the RoHS compliance status or lead times directly with authorized distributors before finalizing procurement orders.

Selection Notes

Select this component when a 25 W output power level is required at frequencies up to 941 MHz. Ensure the design supports a 13.6 V supply rail and accommodates the thermal dissipation needs of the TO-270BA package. Consider the 18.4 dB gain characteristic for system-level power budget calculations and impedance matching network design.

Part Context

This part belongs to Ampleon's portfolio of LDMOS transistors, which are widely used in RF infrastructure. The BLP9LA25SGXY represents a specific configuration optimized for medium-power applications, balancing gain, efficiency, and ruggedness. It serves as a critical active element in signal chain architectures requiring stable amplification in the VHF and UHF bands.

Replacement Considerations

Consult official substitution guides for compatible LDMOS devices from Ampleon or other manufacturers. Verify pinout compatibility and electrical parameter overlaps before replacing. Generic equivalents may not match the specific gain or ruggedness characteristics of the original component.

BLP9LA25SGXYBLP9LA25SGXY
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