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The Ampleon BLP9LA25SGZ is a power LDMOS transistor designed for land mobile radio applications supporting frequencies from HF up to 941 MHz. It operates at a drain-source voltage of 13.6 V and delivers an output power of 25 W. The device features high efficiency, with typical drain efficiency reaching 72% at 520 MHz, and provides a power gain of 18.8 dB under the same conditions. It exhibits extreme ruggedness capable of withstanding a VSWR of 65:1 through all phases. The component is housed in a TO-270-2G-1 package.
Verify the specific ordering suffix against official documentation to confirm the exact packing description and minimum orderable quantity. Confirm that the TO-270-2G-1 package variant matches the design requirements. Ensure compliance with RoHS standards as indicated in the product details. Validate the part number directly with the manufacturer or authorized distributors before finalizing procurement.
Select this component for wideband land mobile radio designs requiring operation across HF to 941 MHz. Consider the thermal resistance of 0.6 K/W when designing the heatsink interface. Evaluate the 65:1 VSWR tolerance for environments prone to load mismatches. Verify that the 13.6 V supply voltage aligns with the system architecture and that the package dimensions fit the PCB layout constraints.
The BLP9LA25SGZ belongs to the BLP9LA25S series of power LDMOS transistors manufactured by Ampleon. This series is specifically engineered for robust performance in challenging RF environments. The SG variant denotes a specific package configuration within the broader family of devices optimized for VHF and UHF band operations.
BLP9LA25S
The device is capable of withstanding a load mismatch corresponding to a VSWR of 65:1 through all phases.
At 520 MHz with an output power of 25 W, the typical drain efficiency is 72%.
Yes, the device features integrated dual-sided ESD protection.