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The BLP9LA25SXY is a dual N-channel LDMOS RF power transistor manufactured by Ampleon. It operates within the frequency range of 1400 MHz to 2200 MHz, delivering an output power of 25 W with a gain of 17 dB. The device features a drain-source breakdown voltage (Vds) of 50 V and a threshold voltage (Vgs th) of 2.5 V. Maximum gate-source voltages are specified at -6 V and +11 V. It supports surface mount installation in an OMP-400-8F-1 package, functioning reliably between -40°C and +125°C.
Verify component authenticity through authorized Ampleon distribution channels or certified partners. Confirm RoHS compliance status and moisture sensitivity level prior to assembly. Ensure storage conditions adhere to JESD22-A113 standards to prevent humidity damage before reflow soldering processes.
Select this component for designs requiring 25 W output power within the 1.4–2.2 GHz spectrum. Evaluate thermal management requirements based on the OMP-400-8F-1 package characteristics. Compare against alternative LDMOS devices if specific impedance matching networks or different voltage headroom constraints exist in the target circuit topology.
This part belongs to the BLP9LA series of ultra-rugged LDMOS transistors designed for broadband infrastructure. It complements other Ampleon offerings like the BLP9H10S series, which targets lower frequencies up to 960 MHz. The LA series specifically addresses higher frequency demands in modern mobile network deployments.
Publicly confirmed substitute part numbers for BLP9LA25SXY are not available in the provided documentation. Engineers should consult official Ampleon replacement guides or contact technical support directly for validated cross-reference data.