SEARCH
— IC芯片 | 连接器 | 传感器 | 被动器件 —
The Ampleon BLP9LA25SZ is a 13.6 V, 25 W Power LDMOS transistor designed for land mobile radio applications supporting frequencies from HF up to 941 MHz. It operates in TO-270-2F-1 packages with drain connected to the flange. Key electrical parameters include a maximum drain-source voltage of 40 V and a junction temperature limit of 225 °C. At 520 MHz with 25 W output power, it delivers typical power gain of 18.8 dB and drain efficiency of 72%. Thermal resistance from junction to case is 0.6 K/W at Tcase = 80 °C.
Verify the specific ordering suffix against the official Ampleon datasheet before procurement. The 'Z' suffix indicates a tape and reel packing format (TR13) with a minimum orderable quantity of 500 pieces. Confirm that the package variant matches the required pinout configuration for the target circuit design.
Select this component for wideband land mobile radio designs requiring high efficiency and extreme load mismatch tolerance. Ensure the thermal management system maintains the case temperature within limits to support the specified 225 °C junction temperature rating during continuous operation.
This device belongs to the BLP9LA25 series of Power LDMOS transistors manufactured by Ampleon. The BLP9LA25SZ represents the specific surface-mount version packaged in the TO-270-2F-1 form factor, intended for automated assembly processes in RF power amplifier modules.
Consult the official Ampleon documentation for confirmed substitute part numbers. Verify compatibility regarding pinout orientation, package dimensions, and absolute maximum ratings before implementing any alternative components.