SEARCH
— IC芯片 | 连接器 | 传感器 | 被动器件 —
The BLS2933-100 is a microwave power LDMOS transistor designed for S-band radar applications operating between 2.9 GHz and 3.3 GHz. It delivers 100 W output power at a 32 V supply voltage with 8 dB gain and 40% drain efficiency in class-AB operation. The device features a flanged ceramic SOT502A package with two mounting holes and two leads. Key electrical characteristics include a drain-source breakdown voltage of 65 V, a gate-source threshold voltage of 3.1 V typical, and a maximum junction temperature of 200 °C. It incorporates integrated ESD protection and is internally matched to simplify circuit design.
Verify the specific ordering suffix against the manufacturer's current documentation to ensure correct packaging and revision status. Confirm that the component meets all environmental and safety standards required for the intended deployment environment before finalizing procurement orders.
Select this component for applications requiring high power density in the S-band frequency range. Ensure the design accommodates the 32 V supply requirement and provides adequate heatsinking to manage thermal impedance. Verify that the load impedance matches the specified values for optimal performance and reliability.
This part belongs to the BLS series of microwave power LDMOS transistors manufactured by Ampleon. These devices are engineered for robust performance in demanding RF environments, specifically targeting radar and communication infrastructure where high linearity and power handling are critical requirements.
Consult official Ampleon substitution guides for verified alternatives. Cross-referencing pinouts, thermal characteristics, and electrical limits is essential when considering replacement options to maintain system integrity.