BLS3135-65,114

Description：RF TRANS NPN 75V 3.5GHZ CDFM2
Series：-

SKU:f3ed446a0309 Category: Bipolar RF Transistors Brand: NXP USA Inc.

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Product introduction

Product Detailed Parameters

Description：RF TRANS NPN 75V 3.5GHZ CDFM2
Series：-
Mfr：NXP USA Inc.
Package：Tray
Transistor Type：NPN
Voltage - Collector Emitter Breakdown (Max)：75V
Frequency - Transition：3.5GHz
Noise Figure (dB Typ @ f)：-
Gain：7dB
Power - Max：200W
DC Current Gain (hFE) (Min) @ Ic, Vce：40 @ 2A, 5V
Current - Collector (Ic) (Max)：8A
Operating Temperature：200°C (TJ)
Mounting Type：Chassis Mount
Package / Case：SOT-422A
Supplier Device Package：CDFM2
Grade：-
Qualification：-

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BLS3135-65,114

Overview

The BLS3135-65 is an NPN silicon planar epitaxial microwave power transistor designed for short and medium pulse applications. It operates in the 3.1 to 3.5 GHz band with a collector voltage of 40 V, delivering a load power of at least 65 W. The device achieves a power gain of ≥7 dB and collector efficiency of ≥35% under pulsed class-C conditions (tp = 100 μs; δ = 10%). Key features include internal input and output matching networks, emitter ballasting resistors, and gold metallization for reliability. It utilizes a multicell geometry to improve power sharing and reduce thermal resistance.

Feature Summary

Internal input and output matching networks simplify circuit design
Emitter ballasting resistors enhance device ruggedness
Gold metallization ensures excellent long-term reliability
Multicell geometry improves power sharing and reduces thermal resistance

Applications

Common base class-C pulsed power amplifiers for radar applications in the 3.1 to 3.5 GHz band

Procurement Notes

Verify component authenticity through authorized channels due to potential availability constraints. Confirm package integrity as the unit contains beryllium oxide; ensure the BeO disc remains undamaged during handling. Dispose of the product according to local chemical waste regulations rather than general domestic waste streams.

Selection Notes

Select this component for high-power pulsed RF applications requiring operation within the 3.1 to 3.5 GHz range. Ensure the design accommodates the SOT422A flange package and provides adequate heatsinking to manage thermal impedance. Verify that the drive power requirements align with the specified performance curves for optimal efficiency and gain.

Part Context

Originally manufactured by Philips Semiconductors, this part is now distributed under the NXP USA Inc. brand. The datasheet supersedes the May 1999 version and was released on August 16, 1999. It represents a legacy microwave power solution suitable for specialized radar systems requiring robust pulsed performance.